中国物理B ›› 2014, Vol. 23 ›› Issue (3): 38507-038507.doi: 10.1088/1674-1056/23/3/038507

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Sixteen-element Ge-on-SOI PIN photo-detector arrays for parallel optical interconnects

李冲, 薛春来, 刘智, 成步文, 王启明   

  1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2013-06-05 修回日期:2013-08-13 出版日期:2014-03-15 发布日期:2014-03-15

Sixteen-element Ge-on-SOI PIN photo-detector arrays for parallel optical interconnects

Li Chong (李冲), Xue Chun-Lai (薛春来), Liu Zhi (刘智), Cheng Bu-Wen (成步文), Wang Qi-Ming (王启明)   

  1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2013-06-05 Revised:2013-08-13 Online:2014-03-15 Published:2014-03-15
  • Contact: Xue Chun-Lai E-mail:clxue@semi.ac.cn

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摘要： We describe the structure and testing of one-dimensional array parallel-optics photo-detectors with 16 photodiodes of which each diode operates up to 8 Gb/s. The single element is vertical and top illuminated 30-μm-diameter silicon on insulator (Ge-on-SOI) PIN photodetector. High-quality Ge absorption layer is epitaxially grown on SOI substrate by the ultra-high vacuum chemical vapor deposition (UHV-CVD). The photodiode exhibits a good responsivity of 0.20 A/W at a wavelength of 1550 nm. The dark current is as low as 0.36 μA at a reverse bias of 1 V, and the corresponding current density is about 51 mA/cm2. The detector with a diameter of 30 μm is measured at an incident light of 1.55 μm and 0.5 mW, and the 3-dB bandwidth is 7.39 GHz without bias and 13.9 GHz at a reverse bias of 3 V. The 16 devices show a good consistency.

关键词: surface illuminate, line array, optical telecommunication, parallel optical interconnects

Abstract: We describe the structure and testing of one-dimensional array parallel-optics photo-detectors with 16 photodiodes of which each diode operates up to 8 Gb/s. The single element is vertical and top illuminated 30-μm-diameter silicon on insulator (Ge-on-SOI) PIN photodetector. High-quality Ge absorption layer is epitaxially grown on SOI substrate by the ultra-high vacuum chemical vapor deposition (UHV-CVD). The photodiode exhibits a good responsivity of 0.20 A/W at a wavelength of 1550 nm. The dark current is as low as 0.36 μA at a reverse bias of 1 V, and the corresponding current density is about 51 mA/cm2. The detector with a diameter of 30 μm is measured at an incident light of 1.55 μm and 0.5 mW, and the 3-dB bandwidth is 7.39 GHz without bias and 13.9 GHz at a reverse bias of 3 V. The 16 devices show a good consistency.

Key words: surface illuminate, line array, optical telecommunication, parallel optical interconnects

中图分类号:  (Photodetectors (including infrared and CCD detectors))

  • 85.60.Gz
95.55.Aq (Charge-coupled devices, image detectors, and IR detector arrays) 85.30.De (Semiconductor-device characterization, design, and modeling)