Fabrication and electrical properties of axial and radial GaAs nanowire pn junction diode arrays

doi:10.1088/1674-1056/23/12/128503

›› 2014, Vol. 23 ›› Issue (12): 128503-128503.doi: 10.1088/1674-1056/23/12/128503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Fabrication and electrical properties of axial and radial GaAs nanowire pn junction diode arrays

李军帅, 张霞, 颜鑫, 陈雄, 李亮, 崔建功, 黄永清, 任晓敏

State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China

收稿日期:2014-03-11 修回日期:2014-05-17 出版日期:2014-12-15 发布日期:2014-12-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61376019 and 61020106007), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20120005110011), the Natural Science Foundation of Beijing (Grant No. 4142038), the 111 Program of China (Grant No. B07005), and the Fund of the State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications).

Fabrication and electrical properties of axial and radial GaAs nanowire pn junction diode arrays

Li Jun-Shuai (李军帅), Zhang Xia (张霞), Yan Xin (颜鑫), Chen Xiong (陈雄), Li Liang (李亮), Cui Jian-Gong (崔建功), Huang Yong-Qing (黄永清), Ren Xiao-Min (任晓敏)

State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China

Received:2014-03-11 Revised:2014-05-17 Online:2014-12-15 Published:2014-12-15
Contact: Zhang Xia E-mail:xzhang@bupt.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61376019 and 61020106007), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20120005110011), the Natural Science Foundation of Beijing (Grant No. 4142038), the 111 Program of China (Grant No. B07005), and the Fund of the State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications).

摘要/Abstract

摘要： We report on the fabrications and characterizations of axial and radial GaAs nanowire pn junction diode arrays. The nanowires are grown on n-doped GaAs (111)B substrates using the Au-catalyzed vapor–liquid–solid mechanism by metal–organic chemical vapor deposition (MOCVD). Diethyl–zinc and silane are used as p- and n-type dopant precursors, respectively. Both the axial and radial diodes exhibit diode-like J–V characteristics and have similar performances under forward bias. Under backward bias, the axial diode has a large leakage current, which is attributed to the bending of the pn junction interface induced by two doping mechanisms in Au-catalyzed nanowires. The low leakage current and high rectification ratio make the radial diode more promising in electrical and optoelectronic devices.

关键词: pn junction diode, GaAs nanowire, MOCVD

Abstract: We report on the fabrications and characterizations of axial and radial GaAs nanowire pn junction diode arrays. The nanowires are grown on n-doped GaAs (111)B substrates using the Au-catalyzed vapor–liquid–solid mechanism by metal–organic chemical vapor deposition (MOCVD). Diethyl–zinc and silane are used as p- and n-type dopant precursors, respectively. Both the axial and radial diodes exhibit diode-like J–V characteristics and have similar performances under forward bias. Under backward bias, the axial diode has a large leakage current, which is attributed to the bending of the pn junction interface induced by two doping mechanisms in Au-catalyzed nanowires. The low leakage current and high rectification ratio make the radial diode more promising in electrical and optoelectronic devices.

Key words: pn junction diode, GaAs nanowire, MOCVD

中图分类号: (Junction diodes)

85.30.Kk

81.07.-b (Nanoscale materials and structures: fabrication and characterization) 81.07.Gf (Nanowires)

李军帅, 张霞, 颜鑫, 陈雄, 李亮, 崔建功, 黄永清, 任晓敏. Fabrication and electrical properties of axial and radial GaAs nanowire pn junction diode arrays[J]. , 2014, 23(12): 128503-128503.

Li Jun-Shuai (李军帅), Zhang Xia (张霞), Yan Xin (颜鑫), Chen Xiong (陈雄), Li Liang (李亮), Cui Jian-Gong (崔建功), Huang Yong-Qing (黄永清), Ren Xiao-Min (任晓敏). Fabrication and electrical properties of axial and radial GaAs nanowire pn junction diode arrays[J]. Chin. Phys. B, 2014, 23(12): 128503-128503.

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Fabrication and electrical properties of axial and radial GaAs nanowire pn junction diode arrays

Fabrication and electrical properties of axial and radial GaAs nanowire pn junction diode arrays

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