›› 2014, Vol. 23 ›› Issue (10): 107803-107803.doi: 10.1088/1674-1056/23/10/107803

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Mid-gap photoluminescence and magnetic properties of GaMnN films grown by metal-organic chemical vapor deposition

邢海英a b, 徐章程a, 崔明启b, 谢玉芯a, 张国义c   

  1. a School of Electronics and Information Engineering, Tianjin Polytechnic University, Tianjin 300387, China;
    b Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China;
    c Research Center for Wide-band Semiconductors, Peking University, Beijing 100871, China
  • 收稿日期:2014-01-16 修回日期:2014-03-28 出版日期:2014-10-15 发布日期:2014-10-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61204008, 11075176, and 60976090) and the National Key Basic Research Special Foundation of China (Grant No. 2013CB328705).

Mid-gap photoluminescence and magnetic properties of GaMnN films grown by metal-organic chemical vapor deposition

Xing Hai-Ying (邢海英)a b, Xu Zhang-Cheng (徐章程)a, Cui Ming-Qi (崔明启)b, Xie Yu-Xin (谢玉芯)a, Zhang Guo-Yi (张国义)c   

  1. a School of Electronics and Information Engineering, Tianjin Polytechnic University, Tianjin 300387, China;
    b Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China;
    c Research Center for Wide-band Semiconductors, Peking University, Beijing 100871, China
  • Received:2014-01-16 Revised:2014-03-28 Online:2014-10-15 Published:2014-10-15
  • Contact: Xu Zhang-Cheng E-mail:zcxu@nankai.edu.cn
  • About author:78.55.-m; 78.30.Fs
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61204008, 11075176, and 60976090) and the National Key Basic Research Special Foundation of China (Grant No. 2013CB328705).

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摘要： Metal-organic chemical vapor deposition (MOCVD) grown ferromagnetic GaMnN films are investigated by photoluminescence (PL) measurement with a mid-gap excitation wavelength of 405 nm. A sharp PL peak at 1.8 eV is found and the PL intensity successively decreases with the addition of Mn, in which the Mn concentration of sample A is below 1% ([Mn] A=0.75%) but its PL intensity is stronger than other samples'. The 1.8-eV PL peak is attributed to the recombination of electrons in the t2 state of the neutral Mn3+ acceptor with holes in the valence band. With Mn concentration increasing, the intensity of the PL peak decreases and the magnetic increment reduces in our samples. The correlation between the PL peak intensity and ferromagnetism of the samples is discussed in combination with the experimental results.

关键词: GaMnN, photoluminescence, magnetism, metal-organic chemical vapor deposition

Abstract: Metal-organic chemical vapor deposition (MOCVD) grown ferromagnetic GaMnN films are investigated by photoluminescence (PL) measurement with a mid-gap excitation wavelength of 405 nm. A sharp PL peak at 1.8 eV is found and the PL intensity successively decreases with the addition of Mn, in which the Mn concentration of sample A is below 1% ([Mn] A=0.75%) but its PL intensity is stronger than other samples'. The 1.8-eV PL peak is attributed to the recombination of electrons in the t2 state of the neutral Mn3+ acceptor with holes in the valence band. With Mn concentration increasing, the intensity of the PL peak decreases and the magnetic increment reduces in our samples. The correlation between the PL peak intensity and ferromagnetism of the samples is discussed in combination with the experimental results.

Key words: GaMnN, photoluminescence, magnetism, metal-organic chemical vapor deposition

中图分类号:  (Photoluminescence, properties and materials)

  • 78.55.-m
78.30.Fs (III-V and II-VI semiconductors)