Dependence of InGaN solar cell performance on polarization-induced electric field and carrier lifetime

doi:10.1088/1674-1056/22/9/098801

中国物理B ›› 2013, Vol. 22 ›› Issue (9): 98801-098801.doi: 10.1088/1674-1056/22/9/098801

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Dependence of InGaN solar cell performance on polarization-induced electric field and carrier lifetime

杨静^a, 赵德刚^a, 江德生^a, 刘宗顺^a, 陈平^a, 李亮^a, 吴亮亮^a, 乐伶聪^a, 李晓静^a, 何晓光^a, 王辉^b, 朱建军^b, 张书明^b, 张宝顺^b, 杨辉^{a b}

a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China

收稿日期:2013-01-16 修回日期:2013-03-04 出版日期:2013-07-26 发布日期:2013-07-26
基金资助:
Project support by the National Science Fund for Distinguished Young Scholars of China (Grant No. 60925017), the National Natural Science Foundation of China (Grant Nos. 10990100, 60836003, and 60976045), and the National Basic Research Program of China (Grant No. 2007CB936700).

Dependence of InGaN solar cell performance on polarization-induced electric field and carrier lifetime

Yang Jing (杨静)^a, Zhao De-Gang (赵德刚)^a, Jiang De-Sheng (江德生)^a, Liu Zong-Shun (刘宗顺)^a, Chen Ping (陈平)^a, Li Liang (李亮)^a, Wu Liang-Liang (吴亮亮)^a, Le Ling-Cong (乐伶聪)^a, Li Xiao-Jing (李晓静)^a, He Xiao-Guang (何晓光)^a, Wang Hui (王辉)^b, Zhu Jian-Jun (朱建军)^b, Zhang Shu-Ming (张书明)^b, Zhang Bao-Shun (张宝顺)^b, Yang Hui (杨辉)^{a b}

a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China

Received:2013-01-16 Revised:2013-03-04 Online:2013-07-26 Published:2013-07-26
Contact: Zhao De-Gang E-mail:dgzhao@red.semi.ac.cn
Supported by:
Project support by the National Science Fund for Distinguished Young Scholars of China (Grant No. 60925017), the National Natural Science Foundation of China (Grant Nos. 10990100, 60836003, and 60976045), and the National Basic Research Program of China (Grant No. 2007CB936700).

摘要/Abstract

摘要： The effects of Mg-induced net acceptor doping concentration and carrier lifetime on the performance of a p-i-n InGaN solar cell are investigated. It is found that the electric field induced by spontaneous and piezoelectric polarization in the i-region could be totally shielded when the Mg-induced net acceptor doping concentration is sufficiently high. The polarization-induced potential barriers are reduced and the short circuit current density is remarkably increased from 0.21 mA/cm² to 0.95 mA/cm² by elevating the Mg doping concentration. The carrier lifetime determined by defect density of i-InGaN also plays an important role in determining the photovoltaic properties of solar cell. The short circuit current density severely degrades, and the performance of InGaN solar cell becomes more sensitive to the polarization when carrier lifetime is lower than the transit time. This study demonstrates that the crystal quality of InGaN absorption layer is one of the most important challenges in realizing high efficiency InGaN solar cells.

关键词: nitride materials, solar cell, polarization

Abstract: The effects of Mg-induced net acceptor doping concentration and carrier lifetime on the performance of a p-i-n InGaN solar cell are investigated. It is found that the electric field induced by spontaneous and piezoelectric polarization in the i-region could be totally shielded when the Mg-induced net acceptor doping concentration is sufficiently high. The polarization-induced potential barriers are reduced and the short circuit current density is remarkably increased from 0.21 mA/cm² to 0.95 mA/cm² by elevating the Mg doping concentration. The carrier lifetime determined by defect density of i-InGaN also plays an important role in determining the photovoltaic properties of solar cell. The short circuit current density severely degrades, and the performance of InGaN solar cell becomes more sensitive to the polarization when carrier lifetime is lower than the transit time. This study demonstrates that the crystal quality of InGaN absorption layer is one of the most important challenges in realizing high efficiency InGaN solar cells.

Key words: nitride materials, solar cell, polarization

中图分类号: (Efficiency and performance of solar cells)

88.40.hj

81.05.Ea (III-V semiconductors) 78.40.Fy (Semiconductors)

杨静, 赵德刚, 江德生, 刘宗顺, 陈平, 李亮, 吴亮亮, 乐伶聪, 李晓静, 何晓光, 王辉, 朱建军, 张书明, 张宝顺, 杨辉. Dependence of InGaN solar cell performance on polarization-induced electric field and carrier lifetime[J]. 中国物理B, 2013, 22(9): 98801-098801.

Yang Jing (杨静), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Liu Zong-Shun (刘宗顺), Chen Ping (陈平), Li Liang (李亮), Wu Liang-Liang (吴亮亮), Le Ling-Cong (乐伶聪), Li Xiao-Jing (李晓静), He Xiao-Guang (何晓光), Wang Hui (王辉), Zhu Jian-Jun (朱建军), Zhang Shu-Ming (张书明), Zhang Bao-Shun (张宝顺), Yang Hui (杨辉). Dependence of InGaN solar cell performance on polarization-induced electric field and carrier lifetime[J]. Chin. Phys. B, 2013, 22(9): 98801-098801.

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Dependence of InGaN solar cell performance on polarization-induced electric field and carrier lifetime

Dependence of InGaN solar cell performance on polarization-induced electric field and carrier lifetime

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