中国物理B ›› 2013, Vol. 22 ›› Issue (9): 98802-098802.doi: 10.1088/1674-1056/22/9/098802

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Electron beam evaporation deposition of cadmium sulphide and cadmium telluride thin films:Solar cell applications

方力a, 陈婧a, 徐岭a, 苏为宁b, 于瑶b, 徐骏a, 马忠元a   

  1. a National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
    b National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
  • 收稿日期:2012-11-03 修回日期:2013-03-21 出版日期:2013-07-26 发布日期:2013-07-26
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61036001 and 60976001), the Priority Academic Program Development of Higher Education Institutions of Jiangsu Province, China, and the National Basic Research Program of China (Grant No. 2013CB632101).

Electron beam evaporation deposition of cadmium sulphide and cadmium telluride thin films:Solar cell applications

Fang Li (方力)a, Chen Jing (陈婧)a, Xu Ling (徐岭)a, Su Wei-Ning (苏为宁)b, Yu Yao (于瑶)b, Xu Jun (徐骏)a, Ma Zhong-Yuan (马忠元)a   

  1. a National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
    b National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
  • Received:2012-11-03 Revised:2013-03-21 Online:2013-07-26 Published:2013-07-26
  • Contact: Xu Ling E-mail:xuling@nju.edu.cn; okxuling@gmail.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61036001 and 60976001), the Priority Academic Program Development of Higher Education Institutions of Jiangsu Province, China, and the National Basic Research Program of China (Grant No. 2013CB632101).

摘要: Cadmium sulphide (CdS) and cadmium telluride (CdTe) thin films are deposited by electron beam evaporation. Atomic force microscopy (AFM) reveals that the root mean square (RMS) roughness values of the CdS films increase as substrate temperature increases. The optical band gap values of CdS films increase slightly with the increase in the substrate temperature, in a range of 2.42-2.48 eV. The result of Hall effect measurement suggests that the carrier concentration decreases as the substrate temperature increases, making the resistivity of the CdS films increase. CdTe films annealed at 300℃ show that their lowest transmittances are due to their largest packing densities. The electrical characteristics of CdS/CdTe thin film solar cells are investigated in dark conditions and under illumination. Typical rectifying and photovoltaic properties are obtained.

关键词: cadmium sulphide, cadmium telluride, electron beam evaporation, solar cell

Abstract: Cadmium sulphide (CdS) and cadmium telluride (CdTe) thin films are deposited by electron beam evaporation. Atomic force microscopy (AFM) reveals that the root mean square (RMS) roughness values of the CdS films increase as substrate temperature increases. The optical band gap values of CdS films increase slightly with the increase in the substrate temperature, in a range of 2.42-2.48 eV. The result of Hall effect measurement suggests that the carrier concentration decreases as the substrate temperature increases, making the resistivity of the CdS films increase. CdTe films annealed at 300℃ show that their lowest transmittances are due to their largest packing densities. The electrical characteristics of CdS/CdTe thin film solar cells are investigated in dark conditions and under illumination. Typical rectifying and photovoltaic properties are obtained.

Key words: cadmium sulphide, cadmium telluride, electron beam evaporation, solar cell

中图分类号:  (Thin film III-V and II-VI based solar cells)

  • 88.40.jm