中国物理B ›› 2013, Vol. 22 ›› Issue (8): 87104-087104.doi: 10.1088/1674-1056/22/8/087104

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Point defect determination by photoluminescence and capacitance-voltage characterization in a GaN terahertz Gunn diode

李亮, 杨林安, 周小伟, 张进成, 郝跃   

  1. School of Microelectronics, Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of Ministry of Education, Xidian University, Xi'an 710071, China
  • 收稿日期:2012-11-23 修回日期:2012-12-29 出版日期:2013-06-27 发布日期:2013-06-27
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61076079 and 61274092), the Doctoral Program Fund of the Ministry of Education of China (Grant No. 20090203110012), and the Major Program and State Key Program of the National Natural Science Foundation of China (Grant No. 60890191).

Point defect determination by photoluminescence and capacitance-voltage characterization in a GaN terahertz Gunn diode

Li Liang (李亮), Yang Lin-An (杨林安), Zhou Xiao-Wei (周小伟), Zhang Jin-Cheng (张进成), Hao Yue (郝跃)   

  1. School of Microelectronics, Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of Ministry of Education, Xidian University, Xi'an 710071, China
  • Received:2012-11-23 Revised:2012-12-29 Online:2013-06-27 Published:2013-06-27
  • Contact: Li Liang E-mail:LL860726@163.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61076079 and 61274092), the Doctoral Program Fund of the Ministry of Education of China (Grant No. 20090203110012), and the Major Program and State Key Program of the National Natural Science Foundation of China (Grant No. 60890191).

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摘要： Photoluminescence (PL) measurement is used to study the point defect distribution in a GaN terahertz Gunn diode, which is able to the degrade high-field transport characteristic during further device operation. PL, secondary ion mass spectroscopy (SIMS), transmission electron microscope (TEM), and capacitance-voltage (C-V) measurements are used to discuss the origin of point defects responsible for the yellow luminescence in structures. The point defect densities of about 1011 cm-2 in structures are extracted by analysis of C-V characterization. After thermal annealing treatment, diminishments of point defect densities in structures are efficiently demonstrated by PL and C-V results.

关键词: GaN terahertz Gunn diode, point defect, photoluminescence, capacitance-voltage

Abstract: Photoluminescence (PL) measurement is used to study the point defect distribution in a GaN terahertz Gunn diode, which is able to the degrade high-field transport characteristic during further device operation. PL, secondary ion mass spectroscopy (SIMS), transmission electron microscope (TEM), and capacitance-voltage (C-V) measurements are used to discuss the origin of point defects responsible for the yellow luminescence in structures. The point defect densities of about 1011 cm-2 in structures are extracted by analysis of C-V characterization. After thermal annealing treatment, diminishments of point defect densities in structures are efficiently demonstrated by PL and C-V results.

Key words: GaN terahertz Gunn diode, point defect, photoluminescence, capacitance-voltage

中图分类号:  (III-V semiconductors)

  • 71.55.Eq
72.10.Fk (Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect)) 73.61.Ey (III-V semiconductors)