中国物理B ›› 2013, Vol. 22 ›› Issue (7): 78102-078102.doi: 10.1088/1674-1056/22/7/078102
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
王弋宇a, 申华军a, 白云a, 汤益丹a, 刘可安b, 李诚瞻b, 刘新宇a
Wang Yi-Yu (王弋宇)a, Shen Hua-Jun (申华军)a, Bai Yun (白云)a, Tang Yi-Dan (汤益丹)a, Liu Ke-An (刘可安)b, Li Cheng-Zhan (李诚瞻)b, Liu Xin-Yu (刘新宇)a
摘要: High-temperature annealing of atomic layer deposition (ALD) of Al2O3 films on 4H-SiC in O2 atmosphere is studied with temperature ranging from 800℃ to 1000℃. It is observed that the surface morphology of Al2O3 films annealed at 800℃ and 900℃ is pretty good, while the surface of the sample annealed at 1000℃ becomes bumpy. Grazing incidence X-ray diffraction (GIXRD) measurements demonstrate that the as-grown films are amorphous and begin to crystallize at 900℃. Furthermore, C-V measurements exhibit improved interface characterization after annealing, especially for samples annealed at 900℃ and 1000℃. It is indicated that high-temperature annealing in O2 atmosphere can improve the interface of Al2O3/SiC and annealing at 900℃ would be an optimum condition for surface morphology, dielectric quality, and interface states.
中图分类号: (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)