中国物理B ›› 2013, Vol. 22 ›› Issue (6): 68802-068802.doi: 10.1088/1674-1056/22/6/068802

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

The effects of InGaN layer thickness on the performance of InGaN/GaN p-i-n solar cells

李亮, 赵德刚, 江德生, 刘宗顺, 陈平, 吴亮亮, 乐伶聪, 王辉, 杨辉   

  1. a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    b Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China
  • 收稿日期:2012-08-20 修回日期:2012-10-30 出版日期:2013-05-01 发布日期:2013-05-01
  • 基金资助:
    Project supported by the National Natural Science Foundation for Distinguished Young Scholars, China (Grant No. 60925017), the National Natural Science Foundation of China (Grant Nos. 10990100, 60836003, 60976045, 61223005, and 61176126), and the National Basic Research Program of China (Grant No. 2007CB936700).

The effects of InGaN layer thickness on the performance of InGaN/GaN p-i-n solar cells

Li Liang (李亮), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Liu Zong-Shun (刘宗顺), Chen Ping (陈平), Wu Liang-Liang (吴亮亮), Le Ling-Cong (乐伶聪), Wang Hui (王辉), Yang Hui (杨辉)   

  1. a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    b Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China
  • Received:2012-08-20 Revised:2012-10-30 Online:2013-05-01 Published:2013-05-01
  • Contact: Zhao De-Gang E-mail:dgzhao@red.semi.ac.cn
  • Supported by:
    Project supported by the National Natural Science Foundation for Distinguished Young Scholars, China (Grant No. 60925017), the National Natural Science Foundation of China (Grant Nos. 10990100, 60836003, 60976045, 61223005, and 61176126), and the National Basic Research Program of China (Grant No. 2007CB936700).

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摘要： InGaN/GaN p–i–n solar cells, each with an undoped In0.12Ga0.88N absorption layer, are grown on c-plane sapphire substrates by metal–organic chemical vapor deposition. The effects of the thickness and dislocation density of the absorption layer on the collection efficiency of InGaN-based solar cells are analyzed, and the experimental results demonstrate that the thickness of the InGaN layer and the dislocation density significantly affect the performance. An optimized InGaNbased solar cell with a peak external quantum efficiency of 57% at a wavelength of 371 nm is reported. The full width at half maximum of the rocking curve of the (0002) InGaN layer is 180 arcsec.

关键词: nitride materials, crystal growth, solar cell, X-ray diffraction

Abstract: InGaN/GaN p–i–n solar cells, each with an undoped In0.12Ga0.88N absorption layer, are grown on c-plane sapphire substrates by metal–organic chemical vapor deposition. The effects of the thickness and dislocation density of the absorption layer on the collection efficiency of InGaN-based solar cells are analyzed, and the experimental results demonstrate that the thickness of the InGaN layer and the dislocation density significantly affect the performance. An optimized InGaNbased solar cell with a peak external quantum efficiency of 57% at a wavelength of 371 nm is reported. The full width at half maximum of the rocking curve of the (0002) InGaN layer is 180 arcsec.

Key words: nitride materials, crystal growth, solar cell, X-ray diffraction

中图分类号:  (Efficiency and performance of solar cells)

  • 88.40.hj
81.05.Ea (III-V semiconductors) 78.40.Fy (Semiconductors)