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Zhi Li(李智), Kun Zhang(张昆), Ao Du(杜奥), Hongchao Zhang(张洪超), Weibin Chen(陈伟斌), Ning Xu(徐宁), Runrun Hao(郝润润), Shishen Yan(颜世申), Weisheng Zhao(赵巍胜), and Qunwen Leng(冷群文). High repetition granular Co/Pt multilayers with improved perpendicular remanent magnetization for high-density magnetic recording[J]. 中国物理B, 2023, 32(2): 26803-026803. |
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Chunjie Yan(晏春杰), Lina Chen(陈丽娜), Kaiyuan Zhou(周恺元), Liupeng Yang(杨留鹏), Qingwei Fu(付清为), Wenqiang Wang(王文强), Wen-Cheng Yue(岳文诚), Like Liang(梁力克), Zui Tao(陶醉), Jun Du(杜军),Yong-Lei Wang(王永磊), and Ronghua Liu(刘荣华). Thickness-dependent magnetic properties in Pt/[Co/Ni]n multilayers with perpendicular magnetic anisotropy[J]. 中国物理B, 2023, 32(1): 17503-017503. |
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Shuyao Chen(陈姝瑶), Yunfei Xie(谢云飞), Yucong Yang(杨玉聪), Dong Gao(高栋), Donghua Liu(刘冬华), Lin Qin(秦林), Wei Yan(严巍), Bi Tan(谭碧), Qiuli Chen(陈秋丽), Tao Gong(龚涛), En Li(李恩), Lei Bi(毕磊), Tao Liu(刘涛), and Longjiang Deng(邓龙江). The 50 nm-thick yttrium iron garnet films with perpendicular magnetic anisotropy[J]. 中国物理B, 2022, 31(4): 48503-048503. |
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Lin-Ao Huang(黄林傲), Mei-Yu Wang(王梅雨), Peng Wang(王鹏), Yuan Yuan(袁源), Ruo-Bai Liu(刘若柏), Tian-Yu Liu(刘天宇), Yu Lu(卢羽), Jia-Rui Chen(陈家瑞), Lu-Jun Wei(魏陆军), Wei Zhang(张维), Biao You(游彪), Qing-Yu Xu(徐庆宇), and Jun Du(杜军). Perpendicular magnetization and exchange bias in epitaxial NiO/[Ni/Pt]2 multilayers[J]. 中国物理B, 2022, 31(2): 27506-027506. |
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Qingwang Bai(白青旺), Bin Guo(郭斌), Qin Yin(尹钦), and Shuyun Wang(王书运). Perpendicular magnetic anisotropy of Pd/Co2MnSi/NiFe2O4/Pd multilayers on F-mica substrates[J]. 中国物理B, 2022, 31(1): 17501-017501. |
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Heng-An Zhou(周恒安), Li Cai(蔡立), Teng Xu(许腾), Yonggang Zhao(赵永刚), and Wanjun Jiang(江万军). Optimized growth of compensated ferrimagnetic insulator Gd3Fe5O12 with a perpendicular magnetic anisotropy[J]. 中国物理B, 2021, 30(9): 97503-097503. |
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杨茂森, 方粮, 池雅庆. Dependence of switching process on the perpendicular magnetic anisotropy constant in P-MTJ[J]. 中国物理B, 2018, 27(9): 98504-098504. |
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刘毅, 朱开贵, 钟汇才, 朱正勇, 于涛, 马苏德. Effect of Mo capping layers thickness on the perpendicular magnetic anisotropy in MgO/CoFeB based top magnetic tunnel junction structure[J]. 中国物理B, 2016, 25(11): 117805-117805. |
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刘厚方, Syed Shahbaz Ali, 韩秀峰. Perpendicular magnetic tunnel junction and its application in magnetic random access memory[J]. 中国物理B, 2014, 23(7): 77501-077501. |
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