Recent progress in perpendicularly magnetized Mn-based binary alloy films

doi:10.1088/1674-1056/22/11/118505

摘要/Abstract

摘要： In this article, we review the recent progress in growth, structural characterizations, magnetic properties, and related spintronic devices of tetragonal Mn_xGa and Mn_xAl thin films with perpendicular magnetic anisotropy. First, we present a brief introduction to the demands for perpendicularly magnetized materials in spintronics, magnetic recording, and permanent magnets applications, and the most promising candidates of tetragonal Mn_xGa and Mn_xAl with strong perpendicular magnetic anisotropy. Then, we focus on the recent progress of perpendicularly magnetized Mn_xGa and Mn_xAl respectively, including their lattice structures, bulk synthesis, epitaxial growth, structural characterizations, magnetic and other spin-dependent properties, and spintronic devices like magnetic tunneling junctions, spin valves, and spin injectors into semiconductors. Finally, we give a summary and a perspective of these perpendicularly magnetized Mn-based binary alloy films for future applications.

关键词: spintronics, magnetic material, perpendicular magnetic anisotropy, spin polarized transport in semiconductors

Abstract: In this article, we review the recent progress in growth, structural characterizations, magnetic properties, and related spintronic devices of tetragonal Mn_xGa and Mn_xAl thin films with perpendicular magnetic anisotropy. First, we present a brief introduction to the demands for perpendicularly magnetized materials in spintronics, magnetic recording, and permanent magnets applications, and the most promising candidates of tetragonal Mn_xGa and Mn_xAl with strong perpendicular magnetic anisotropy. Then, we focus on the recent progress of perpendicularly magnetized Mn_xGa and Mn_xAl respectively, including their lattice structures, bulk synthesis, epitaxial growth, structural characterizations, magnetic and other spin-dependent properties, and spintronic devices like magnetic tunneling junctions, spin valves, and spin injectors into semiconductors. Finally, we give a summary and a perspective of these perpendicularly magnetized Mn-based binary alloy films for future applications.

Key words: spintronics, magnetic material, perpendicular magnetic anisotropy, spin polarized transport in semiconductors

中图分类号: (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)

85.75.-d

75.50.-y (Studies of specific magnetic materials) 75.30.Gw (Magnetic anisotropy) 72.25.Dc (Spin polarized transport in semiconductors)

朱礼军, 聂帅华, 赵建华. Recent progress in perpendicularly magnetized Mn-based binary alloy films[J]. 中国物理B, 2013, 22(11): 118505-118505.

Zhu Li-Jun (朱礼军), Nie Shuai-Hua (聂帅华), Zhao Jian-Hua (赵建华). Recent progress in perpendicularly magnetized Mn-based binary alloy films[J]. Chin. Phys. B, 2013, 22(11): 118505-118505.

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