Chin. Phys. B ›› 2013, Vol. 22 ›› Issue (4): 47304-047304.doi: 10.1088/1674-1056/22/4/047304
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
雷晓艺a, 刘红侠a, 张凯a, 张月a, 郑雪峰a, 马晓华a b, 郝跃a
Lei Xiao-Yi (雷晓艺)a, Liu Hong-Xia (刘红侠)a, Zhang Kai (张凯)a, Zhang Yue (张月)a, Zheng Xue-Feng (郑雪峰)a, Ma Xiao-Hua (马晓华)a b, Hao Yue (郝跃)a
摘要: The hot carrier effect (HCE) of ultra-deep sub-micron p-channel metal-oxide semiconductor field-effect transistor (pMOSFET) is investigated in this paper. Experiments indicate that the generation of positively charged interface states is the predominant mechanism in the case of ultra-deep sub-micron pMOSFET. The relation of the pMOSFET hot carrier degradation to stress time (t), channel width (W), channel length (L), and stress voltage (Vd) is then discussed. Based on the relation, a lifetime prediction model is proposed, which can predict the lifetime of the ultra-deep sub-micron pMOSFET accurately and reflect the influence of the factors on hot carrier degradation directly.
中图分类号: (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))