Chin. Phys. B ›› 2013, Vol. 22 ›› Issue (4): 47304-047304.doi: 10.1088/1674-1056/22/4/047304

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Hot carrier degradation and a new lifetime prediction model in ultra-deep sub-micron pMOSFET

雷晓艺a, 刘红侠a, 张凯a, 张月a, 郑雪峰a, 马晓华a b, 郝跃a   

  1. a Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of Ministry of Education, State Key Discipline Laboratory of Wide Bandgap Semiconductor Technologies,School of Microelectronics, Xidian University, Xi'an 710071, China;
    b School of Technical Physics, Xidian University, Xi'an 710071, China
  • 收稿日期:2012-09-12 修回日期:2012-10-22 出版日期:2013-03-01 发布日期:2013-03-01
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant No. 2011CBA00606), the National Natural Science Foundation of China (Grant No. 61106106), and the Fundamental Research Funds for the Central Universities, China (Grant No. K50510250006).

Hot carrier degradation and a new lifetime prediction model in ultra-deep sub-micron pMOSFET

Lei Xiao-Yi (雷晓艺)a, Liu Hong-Xia (刘红侠)a, Zhang Kai (张凯)a, Zhang Yue (张月)a, Zheng Xue-Feng (郑雪峰)a, Ma Xiao-Hua (马晓华)a b, Hao Yue (郝跃)a   

  1. a Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of Ministry of Education, State Key Discipline Laboratory of Wide Bandgap Semiconductor Technologies,School of Microelectronics, Xidian University, Xi'an 710071, China;
    b School of Technical Physics, Xidian University, Xi'an 710071, China
  • Received:2012-09-12 Revised:2012-10-22 Online:2013-03-01 Published:2013-03-01
  • Contact: Lei Xiao-Yi E-mail:lydialeixy@163.com
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant No. 2011CBA00606), the National Natural Science Foundation of China (Grant No. 61106106), and the Fundamental Research Funds for the Central Universities, China (Grant No. K50510250006).

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摘要： The hot carrier effect (HCE) of ultra-deep sub-micron p-channel metal-oxide semiconductor field-effect transistor (pMOSFET) is investigated in this paper. Experiments indicate that the generation of positively charged interface states is the predominant mechanism in the case of ultra-deep sub-micron pMOSFET. The relation of the pMOSFET hot carrier degradation to stress time (t), channel width (W), channel length (L), and stress voltage (Vd) is then discussed. Based on the relation, a lifetime prediction model is proposed, which can predict the lifetime of the ultra-deep sub-micron pMOSFET accurately and reflect the influence of the factors on hot carrier degradation directly.

关键词: pMOSFETs, hot carrier effect (HCE), degradation, lifetime modeling

Abstract: The hot carrier effect (HCE) of ultra-deep sub-micron p-channel metal-oxide semiconductor field-effect transistor (pMOSFET) is investigated in this paper. Experiments indicate that the generation of positively charged interface states is the predominant mechanism in the case of ultra-deep sub-micron pMOSFET. The relation of the pMOSFET hot carrier degradation to stress time (t), channel width (W), channel length (L), and stress voltage (Vd) is then discussed. Based on the relation, a lifetime prediction model is proposed, which can predict the lifetime of the ultra-deep sub-micron pMOSFET accurately and reflect the influence of the factors on hot carrier degradation directly.

Key words: pMOSFETs, hot carrier effect (HCE), degradation, lifetime modeling

中图分类号:  (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

  • 73.40.Qv
85.30.Tv (Field effect devices)