Effects of NPB anode buffer layer on charge collection in ZnO/MEH-PPV hybrid solar cells

doi:10.1088/1674-1056/22/12/128402

Chin. Phys. B ›› 2013, Vol. 22 ›› Issue (12): 128402-128402.doi: 10.1088/1674-1056/22/12/128402

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Effects of NPB anode buffer layer on charge collection in ZnO/MEH-PPV hybrid solar cells

龚伟^{a b}, 徐征^{a b}, 赵谡玲^{a b}, 刘晓东^{a b}, 樊星^{a b}, 杨倩倩^{a b}, 孔超^{a b}

a Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University), Ministry of Education, Beijing 100044, China;
b Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China

收稿日期:2013-07-24 修回日期:2013-08-19 出版日期:2013-10-25 发布日期:2013-10-25
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2010CB327704), the National Natural Science Foundation of China (Grant No. 51272022), the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-10-0220), the Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20120009130005), and the Fundamental Research Funds for the Central Universities, China (Grant No. 2012JBZ001).

Effects of NPB anode buffer layer on charge collection in ZnO/MEH-PPV hybrid solar cells

Gong Wei (龚伟)^{a b}, Xu Zheng (徐征)^{a b}, Zhao Su-Ling (赵谡玲)^{a b}, Liu Xiao-Dong (刘晓东)^{a b}, Fan Xing (樊星)^{a b}, Yang Qian-Qian (杨倩倩)^{a b}, Kong Chao (孔超)^{a b}

a Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University), Ministry of Education, Beijing 100044, China;
b Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China

Received:2013-07-24 Revised:2013-08-19 Online:2013-10-25 Published:2013-10-25
Contact: Xu Zheng E-mail:zhengxu@bjtu.edu.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2010CB327704), the National Natural Science Foundation of China (Grant No. 51272022), the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-10-0220), the Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20120009130005), and the Fundamental Research Funds for the Central Universities, China (Grant No. 2012JBZ001).

摘要/Abstract

摘要： We investigate the effects of (N,N’-diphenyl)-N,N’-bis(1-naphthyl)-1,1’-biphenyl-4,4’-diamine (NPB) buffer layers on charge collection in inverted ZnO/MEH-PPV hybrid devices. The insertion of a 3-nm NPB thin layer enhances the efficiency of charge collection by improving charge transport and reducing the interface energy barrier, resulting in better device performances. S-shaped light J–V curve appears when the thickness of the NPB layer reaches 25 nm, which is induced by the inefficient charge extraction from MEH-PPV to Ag. Capacitance–voltage measurements are performed to further investigate the influence of the NPB layer on charge collection from both simulations and experiments.

关键词: NPB, capacitance–, voltage measurement, charge collection, buffer layer

Abstract: We investigate the effects of (N,N’-diphenyl)-N,N’-bis(1-naphthyl)-1,1’-biphenyl-4,4’-diamine (NPB) buffer layers on charge collection in inverted ZnO/MEH-PPV hybrid devices. The insertion of a 3-nm NPB thin layer enhances the efficiency of charge collection by improving charge transport and reducing the interface energy barrier, resulting in better device performances. S-shaped light J–V curve appears when the thickness of the NPB layer reaches 25 nm, which is induced by the inefficient charge extraction from MEH-PPV to Ag. Capacitance–voltage measurements are performed to further investigate the influence of the NPB layer on charge collection from both simulations and experiments.

Key words: NPB, capacitance–voltage measurement, charge collection, buffer layer

中图分类号: (Photoelectric conversion)

84.60.Jt

84.37.+q (Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)) 82.45.Mp (Thin layers, films, monolayers, membranes)

龚伟, 徐征, 赵谡玲, 刘晓东, 樊星, 杨倩倩, 孔超. Effects of NPB anode buffer layer on charge collection in ZnO/MEH-PPV hybrid solar cells[J]. Chin. Phys. B, 2013, 22(12): 128402-128402.

Gong Wei (龚伟), Xu Zheng (徐征), Zhao Su-Ling (赵谡玲), Liu Xiao-Dong (刘晓东), Fan Xing (樊星), Yang Qian-Qian (杨倩倩), Kong Chao (孔超). Effects of NPB anode buffer layer on charge collection in ZnO/MEH-PPV hybrid solar cells[J]. Chin. Phys. B, 2013, 22(12): 128402-128402.

参考文献 40

[1]	Jonsson S K M, Carlegrim E, Zhang F, Salaneck W R and Fahlman M 2005 Jpn. J. Appl. Phys. 44 3695
[2]	Yook K S and Lee J Y 2010 J. Ind. Eng. Chem. 16 230
[3]	Liu X D, Leeb J Y and Guob L J 2013 Org. Electron. 14 469
[4]	Zhao D W, Tan S T, Ke L, Liu P, Kyaw A K K, Sun X W, Lo G Q and Kwong D L 2010 Sol. Energ. Mater. Sol. Cells 94 985
[5]	Kyaw A, Sun X W, Jiang C Y, Lo G Q, Zhao D W and Kwong D L 2008 Appl. Phys. Lett. 93 221107
[6]	Pan H B, Zuo L J, Fu W F, Fan C C, Andreasen B, Jiang X Q, Norrman K, Krebs F C and Chen H Z 2013 Org. Electron. 14 797
[7]	Han S, Shin W S, Seo M, Gupta D, Moon S J and Yoo S 2009 Org. Electron. 10 791
[8]	Long Y B 2010 Sol. Energ. Mater. Sol. Cells 94 744
[9]	Shrotriya V, Li G, Yao Y, Chu C W and Yang Y 2006 Appl. Phys. Lett. 88 073508
[10]	Liu X D, Xu Z, Zhang F J, Zhao S L, Zhang T H, Gong W, Song J L, Kong C, Yan G and Xu X R 2010 Chin. Phys. B 19 118601
[11]	Liu X D, Xu Z, Zhang F J, Zhao S L, Zhang T H, Gong W, Yan G, Kong C, Wang Y S and Xu X R 2011 Chin. Phys. B 20 068801
[12]	Huang J S, Xu Z and Yang Y 2007 Adv. Funct. Mater. 17 1966
[13]	Li Y, Zhang D Q, Duan L, Zhang R, Wang L D and Qiu Y 2007 Appl. Phys. Lett. 90 012119
[14]	Li Z F, Wu Z X, Jiao B, Liu P, Wang D D and Hou X 2012 Chem. Phys. Lett. 527 36
[15]	Xie G H, Xue Q, Chen P, Tao C, Zhao C M, Lu J H, Gong Z X, Zhang T Y, Huang R and Du H 2010 Org. Electron. 11 407
[16]	Halls M D, Tripp C P and Schlegel H B 2001 Phys. Chem. Chem. Phys. 3 2131
[17]	Shrotriya V and Yang Y 2005 J. Appl. Phys. 97 054504
[18]	Tsang S W, So S K and Xu J B 2006 J. Appl. Phys. 99 013706
[19]	Garcia-Belmonte G, Munar A, Barea E M, Bisquert J, Ugarte I and Pacios R 2008 Org. Electron. 9 847
[20]	Wang J C, Ren X C, Shi S Q, Leung C W and Chan P K L 2011 Org. Electron. 12 880
[21]	Burgelman M, Nollet P and Degrave S 2000 Thin Solid Films 361 527
[22]	Burgelman M, Verschraegen J, Degrave S and Nollet P 2004 Prog. Photovolt: Res. Appl. 12 143
[23]	Khelifi S, Decock K, Lauwaert J, Vrielinck H, Spoltore D, Piersimoni F, Manca J, Belghachi A and Burgelman M 2011 J. Appl. Phys. 110 094509
[24]	Zhao S L, Kan P Z, Xu Z, Kong C, Wang D W, Yan Y and Wang Y S 2010 Org. Electron. 11 789
[25]	He Z C, Zhong C M, Huang X, Wong W Y, Wu H B, Chen L W, Su S J and Cao Y 2011 Adv. Mater. 23 4636
[26]	He C, Zhong C M, Wu H B, Yang R Q, Yang W, Huang F, Bazan G C and Cao Y 2010 J. Mater. Chem. 20 2617
[27]	Cai W Z, Gong X and Cao Y 2010 Sol. Energ. Mater. Sol. Cells 94 114
[28]	Hung L S, Tang C W and Mason M G 1997 Appl. Phys. Lett. 70 152
[29]	Zhang F J, Zhao D W, Zhuo Z L, Wang H, Xu Z and Wang Y S 2010 Sol. Energ. Mater. Sol. Cells 94 2416
[30]	Tress W, Petrich A, Hummert M, Hein M, Leo K and Riede M 2011 Appl. Phys. Lett. 98 063301
[31]	Tress W, Leo K and Riede M. 2011 Adv. Funct. Mater. 21 2140
[32]	He Z C, Zhong C M, Su S J, Xu M, Wu H B and Cao Y 2012 Nat. Photon. 6 593
[33]	Xia R D, Leem D S, Kirchartz T, Spencer S, Murphy C, He Z C, Wu H B, Su S J, Cao Y, Kim J S, de Mello J C, Bradley D D C and Nelson J 2013 Adv. Energy Mater. 3 718
[34]	Kim G H, Song H K and Kim J Y 2011 Sol. Energ. Mater. Sol. Cells 95 1119
[35]	Kirchartz T, Gong W, Hawks S A, Agostinelli T, MacKenzie R C, Yang Y and Nelson J 2012 J. Phys. Chem. Cells 116 7672
[36]	Wang M D, Zheng S Z, Wan X, Su Y R, Ke N, Zhao N, Wong K Y and Xu J B 2013 Sol. Energ. Mater. Sol. Cells 108 17
[37]	Mihailetchi V D, Wildeman J and Blom P W M 2005 Phys. Rev. Lett. 94 126602
[38]	Blom P W M, Mihailetchi V D, Koster L J A and Markov D E 2007 Adv. Mater. 19 1551
[39]	Peet J, Kim J Y, Coates N E, Ma W L, Moses D, Heeger A J and Bazan G C 2007 Nat. Mater. 6 497
[40]	Shuttle C G, Hamilton R, O’Regan B C, Nelson J and Durrant J R 2010 Proc. Natl. Acad. Sci. 107 16448

Effects of NPB anode buffer layer on charge collection in ZnO/MEH-PPV hybrid solar cells

Effects of NPB anode buffer layer on charge collection in ZnO/MEH-PPV hybrid solar cells

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 40

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Zhen-Zhuo Zhang(张臻琢), Jing Yang(杨静), De-Gang Zhao(赵德刚), Feng Liang(梁锋), Ping Chen(陈平), and Zong-Shun Liu(刘宗顺). Influence of the lattice parameter of the AlN buffer layer on the stress state of GaN film grown on (111) Si[J]. 中国物理B, 2023, 32(2): 28101-028101.
[2]	陈潜, 杨松鹤, 董磊, 蔡思源, 许家驹, 许宗祥. Tetraalkyl-substituted zinc phthalocyanines used as anode buffer layers for organic light-emitting diodes[J]. 中国物理B, 2020, 29(1): 17302-017302.
[3]	姜振武, 高守帅, 王思宇, 王东潇, 高鹏, 孙强, 周志强, 刘玮, 孙云, 张毅. Insight into band alignment of Zn(O,S)/CZTSe solar cell by simulation[J]. 中国物理B, 2019, 28(4): 48801-048801.
[4]	闫慧龙, 闫金良, 赵刚. Heat transfer of liquid metal alloy on copper plate deposited with film of different surface free energy[J]. 中国物理B, 2019, 28(11): 114401-114401.
[5]	寇志起, 唐宇, 杨丽萍, 杨飞宇, 郭文军. Improvement of electro-optic performances in white organic light emitting diodes with color stability by buffer layer and multiple dopants structure[J]. 中国物理B, 2018, 27(10): 107801-107801.
[6]	魏冠男, 谭青海, 戴兴, 冯琦, 骆文刚, 盛宇, 王凯, 潘文武, 张立瑶, 王庶民, 王开友. Bismuth-content-dependent polarized Raman spectrum of InPBi alloy[J]. 中国物理B, 2016, 25(6): 66301-066301.
[7]	王桃红, 陈长博, 郭坤平, 陈果, 徐韬, 魏斌. Improved performance of polymer solar cells by using inorganic, organic, and doped cathode buffer layers[J]. 中国物理B, 2016, 25(3): 38402-038402.
[8]	史振亮, 季云, 于威, 杨彦斌, 丛日东, 陈英娟, 李晓苇, 傅广生. Improved performance of microcrystalline silicon solar cell with graded-band-gap silicon oxide buffer layer[J]. 中国物理B, 2015, 24(7): 78105-078105.
[9]	胡泊, 何为, 叶军, 汤进, Syed Sheraz Ahmad, 张向群, 成昭华. Effect of CoSi₂ buffer layer on structure and magnetic properties of Co films grown on Si (001) substrate[J]. 中国物理B, 2015, 24(1): 17502-017502.
[10]	毕津顺, 曾传滨, 高林春, 刘刚, 罗家俊, 韩郑生. Estimation of pulsed laser-induced single event transient in a partially depleted silicon-on-insulator 0.18-μm MOSFET[J]. , 2014, 23(8): 88505-088505.
[11]	杨卓, 杨靖治, 黄永, 张锴, 郝跃. Effect of alumina thickness on Al₂O₃/InP interface with post deposition annealing in oxygen ambient[J]. , 2014, 23(7): 77305-077305.
[12]	燕少安, 唐明华, 赵雯, 郭红霞, 张万里, 徐新宇, 王旭东, 丁浩, 陈建伟, 李正, 周益春. Single event effect in a ferroelectric-gate field-effect transistor under heavy-ion irradiation[J]. 中国物理B, 2014, 23(4): 46104-046104.
[13]	黎明, 王勇, 王凯明, 刘纪美. Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition[J]. 中国物理B, 2014, 23(3): 38403-038403.
[14]	杨倩倩, 杨道宾, 赵谡玲, 黄艳, 徐征, 龚伟, 樊星, 刘志方, 黄清雨, 徐叙瑢. UV-ozone-treated MoO₃ as the hole-collecting buffer layer for high-efficiency solution-processed SQ：PC₇₁BM photovoltaic devices[J]. 中国物理B, 2014, 23(3): 38405-038405.
[15]	颜鑫, 张霞, 李军帅, 吕晓龙, 任晓敏, 黄永清. Growth and characterization of straight InAs/GaAs nanowireheterostructures on Si substrate[J]. 中国物理B, 2013, 22(7): 76102-076102.