Efficient evanescent coupling design for GeSi electro-absorption modulator

doi:10.1088/1674-1056/22/12/124209

Chin. Phys. B ›› 2013, Vol. 22 ›› Issue (12): 124209-124209.doi: 10.1088/1674-1056/22/12/124209

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇下一篇

Efficient evanescent coupling design for GeSi electro-absorption modulator

李亚明, 成步文

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2013-03-12 修回日期:2013-03-28 出版日期:2013-10-25 发布日期:2013-10-25

Efficient evanescent coupling design for GeSi electro-absorption modulator

Li Ya-Ming (李亚明), Cheng Bu-Wen (成步文)

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2013-03-12 Revised:2013-03-28 Online:2013-10-25 Published:2013-10-25
Contact: Li Ya-Ming E-mail:ymli@semi.ac.cn

摘要/Abstract

摘要： Efficient coupling from the silicon waveguide to the GeSi layer is the key to success in the GeSi electro-absorption (EA) modulator based on evanescent coupling. A lateral taper in the upper GeSi layer has room for increasing the modulating efficiency and alleviating the sensitivity of the extinction ratio (ER) and insertion loss (IL) to the length of the active region. The light behavior and the effect of the taper are explored in detail using the beam propagation method (BPM). After optimization, the light can nearly be totally confined in the GeSi layer without any oscillation. The modulator with the designed taper can achieve low IL and high ER.

关键词: electro–, optical modulators, waveguides, integrated optoelectronic circuit

Abstract: Efficient coupling from the silicon waveguide to the GeSi layer is the key to success in the GeSi electro-absorption (EA) modulator based on evanescent coupling. A lateral taper in the upper GeSi layer has room for increasing the modulating efficiency and alleviating the sensitivity of the extinction ratio (ER) and insertion loss (IL) to the length of the active region. The light behavior and the effect of the taper are explored in detail using the beam propagation method (BPM). After optimization, the light can nearly be totally confined in the GeSi layer without any oscillation. The modulator with the designed taper can achieve low IL and high ER.

Key words: electro–optical modulators, waveguides, integrated optoelectronic circuit

中图分类号: (Optical processors, correlators, and modulators)

42.79.Hp

42.82.-m (Integrated optics) 78.66.-w (Optical properties of specific thin films)

李亚明, 成步文. Efficient evanescent coupling design for GeSi electro-absorption modulator[J]. Chin. Phys. B, 2013, 22(12): 124209-124209.

Li Ya-Ming (李亚明), Cheng Bu-Wen (成步文). Efficient evanescent coupling design for GeSi electro-absorption modulator[J]. Chin. Phys. B, 2013, 22(12): 124209-124209.

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Efficient evanescent coupling design for GeSi electro-absorption modulator

Efficient evanescent coupling design for GeSi electro-absorption modulator

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