中国物理B ›› 2013, Vol. 22 ›› Issue (12): 124208-124208.doi: 10.1088/1674-1056/22/12/124208

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇    下一篇

Polarization readout analysis for multilevel phase change recording by crystallization degree modulation

林金成a b, 龙国云a b, 王阳a, 吴谊群a   

  1. a Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China;
    b University of the Chinese Academy of Sciences, Beijing 100049, China
  • 收稿日期:2013-03-18 修回日期:2013-04-08 出版日期:2013-10-25 发布日期:2013-10-25
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61178059 and 61137002) and the Key Program of the Science and Technology Commission of Shanghai Municipality, China (Grant No. 11jc1413300).

Polarization readout analysis for multilevel phase change recording by crystallization degree modulation

Lin Jin-Cheng (林金成)a b, Long Guo-Yun (龙国云)a b, Wang Yang (王阳)a, Wu Yi-Qun (吴谊群)a   

  1. a Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China;
    b University of the Chinese Academy of Sciences, Beijing 100049, China
  • Received:2013-03-18 Revised:2013-04-08 Online:2013-10-25 Published:2013-10-25
  • Contact: Wang Yang E-mail:ywang@siom.ac.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61178059 and 61137002) and the Key Program of the Science and Technology Commission of Shanghai Municipality, China (Grant No. 11jc1413300).

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摘要： Four different states of Si15Sb85 and Ge2Sb2Te5 phase change memory thin films are obtained by crystallization degree modulation through laser initialization at different powers or annealing at different temperatures. The polarization characteristics of these two four-level phase change recording media are analyzed systematically. A simple and effective readout scheme is then proposed, and the readout signal is numerically simulated. The results show that a high-contrast polarization readout can be obtained in an extensive wavelength range for the four-level phase change recording media using common phase change materials. This study will help in-depth understanding of the physical mechanisms and provide technical approaches to multilevel phase change recording.

关键词: optical data storage, phase change memory materials, multilevel recording, polarization readout

Abstract: Four different states of Si15Sb85 and Ge2Sb2Te5 phase change memory thin films are obtained by crystallization degree modulation through laser initialization at different powers or annealing at different temperatures. The polarization characteristics of these two four-level phase change recording media are analyzed systematically. A simple and effective readout scheme is then proposed, and the readout signal is numerically simulated. The results show that a high-contrast polarization readout can be obtained in an extensive wavelength range for the four-level phase change recording media using common phase change materials. This study will help in-depth understanding of the physical mechanisms and provide technical approaches to multilevel phase change recording.

Key words: optical data storage, phase change memory materials, multilevel recording, polarization readout

中图分类号:  (Holographic recording materials; optical storage media)

  • 42.70.Ln
42.79.Vb (Optical storage systems, optical disks)