中国物理B ›› 2013, Vol. 22 ›› Issue (12): 124208-124208.doi: 10.1088/1674-1056/22/12/124208
• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇 下一篇
林金成a b, 龙国云a b, 王阳a, 吴谊群a
Lin Jin-Cheng (林金成)a b, Long Guo-Yun (龙国云)a b, Wang Yang (王阳)a, Wu Yi-Qun (吴谊群)a
摘要: Four different states of Si15Sb85 and Ge2Sb2Te5 phase change memory thin films are obtained by crystallization degree modulation through laser initialization at different powers or annealing at different temperatures. The polarization characteristics of these two four-level phase change recording media are analyzed systematically. A simple and effective readout scheme is then proposed, and the readout signal is numerically simulated. The results show that a high-contrast polarization readout can be obtained in an extensive wavelength range for the four-level phase change recording media using common phase change materials. This study will help in-depth understanding of the physical mechanisms and provide technical approaches to multilevel phase change recording.
中图分类号: (Holographic recording materials; optical storage media)