Analyses of temperature-dependent interface states, series resistances, and AC electrical conductivities of Al/p–Si and Al/Bi4Ti3O12/p–Si structures by using the admittance spectroscopy method

doi:10.1088/1674-1056/22/10/108502

中国物理B ›› 2013, Vol. 22 ›› Issue (10): 108502-108502.doi: 10.1088/1674-1056/22/10/108502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Analyses of temperature-dependent interface states, series resistances, and AC electrical conductivities of Al/p–Si and Al/Bi₄Ti₃O₁₂/p–Si structures by using the admittance spectroscopy method

Mert Yíldírím^a, Perihan Durmuş^b, Şemsettin Altíndal^b

a Department of Physics, Faculty of Arts & Sciences, Düzce University, 81620, Düzce, Turkey;
b Department of Physics, Faculty of Sciences, Gazi University, 06500, Ankara, Turkey

收稿日期:2012-12-26 修回日期:2013-04-10 出版日期:2013-08-30 发布日期:2013-08-30

Analyses of temperature-dependent interface states, series resistances, and AC electrical conductivities of Al/p–Si and Al/Bi₄Ti₃O₁₂/p–Si structures by using the admittance spectroscopy method

Mert Yíldírím^a, Perihan Durmu?^b, ?emsettin Altíndal^b

a Department of Physics, Faculty of Arts & Sciences, Düzce University, 81620, Düzce, Turkey;
b Department of Physics, Faculty of Sciences, Gazi University, 06500, Ankara, Turkey

Received:2012-12-26 Revised:2013-04-10 Online:2013-08-30 Published:2013-08-30
Contact: Mert Yíldírím E-mail:mertyildirim@duzce.edu.tr

摘要/Abstract

摘要： In this study, Al/p-Si and Al/Bi₄Ti₃O₁₂/p-Si structures are fabricated and their interface states (N_ss), the values of series resistance (R_s), and AC electrical conductivity (σ_ac) are obtained each as a function of temperature using admittance spectroscopy method which includes capacitance-voltage (C-V) and conductance-voltage (G-V) measurements. In addition, the effect of interfacial Bi₄Ti₃O₁₂ (BTO) layer on the performance of the structure is investigated. The voltage-dependent profiles of N_ss and R_s are obtained from the high-low frequency capacitance method and the Nicollian method, respectively. Experimental results show that N_ss and R_s, as strong functions of temperature and applied bias voltage, each exhibit a peak, whose position shifts towards the reverse bias region, in the depletion region. Such a peak behavior is attributed to the particular distribution of N_ss and the reordering and restructuring of N_ss under the effect of temperature. The values of activation energy (E_a), obtained from the slope of the Arrhenius plot, of both structures are obtained to be bias voltage-independent, and the E_a of the metal-ferroelectric-semiconductor (MFS) structure is found to be half that of the metal-semiconductor (MS) structure. Furthermore, other main electrical parameters, such as carrier concentration of acceptor atoms (N_A), built-in potential (V_bi), Fermi energy (E_F), image force barrier lowering (ΔΦ_b), and barrier height (Φ_b), are extracted using reverse bias C^-2-V characteristics as a function of temperature.

关键词: MFS structures, Bismuth titanate, temperature dependent, activation energy, AC electrical conductivity

Abstract: In this study, Al/p–Si and Al/Bi₄Ti₃O₁₂/p–Si structures are fabricated and their interface states (N_ss), the values of series resistance (R_s), and AC electrical conductivity (σ_ac) are obtained each as a function of temperature using admittance spectroscopy method which includes capacitance-voltage (C–V) and conductance-voltage (G–V) measurements. In addition, the effect of interfacial Bi₄Ti₃O₁₂ (BTO) layer on the performance of the structure is investigated. The voltage-dependent profiles of N_ss and R_s are obtained from the high-low frequency capacitance method and the Nicollian method, respectively. Experimental results show that N_ss and R_s, as strong functions of temperature and applied bias voltage, each exhibit a peak, whose position shifts towards the reverse bias region, in the depletion region. Such a peak behavior is attributed to the particular distribution of N_ss and the reordering and restructuring of N_ss under the effect of temperature. The values of activation energy (E_a), obtained from the slope of the Arrhenius plot, of both structures are obtained to be bias voltage-independent, and the E_a of the metal-ferroelectric-semiconductor (MFS) structure is found to be half that of the metal-semiconductor (MS) structure. Furthermore, other main electrical parameters, such as carrier concentration of acceptor atoms (N_A), built-in potential (V_bi), Fermi energy (E_F), image force barrier lowering (ΔΦ_b), and barrier height (Φ_b), are extracted using reverse bias C^-2-V characteristics as a function of temperature.

Key words: MFS structures, Bismuth titanate, temperature dependent, activation energy, AC electrical conductivity

中图分类号: (Surface barrier, boundary, and point contact devices)

85.30.Hi

85.30.Kk (Junction diodes) 84.37.+q (Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))

Mert Yíldírím, Perihan Durmuş, Şemsettin Altíndal. Analyses of temperature-dependent interface states, series resistances, and AC electrical conductivities of Al/p–Si and Al/Bi₄Ti₃O₁₂/p–Si structures by using the admittance spectroscopy method[J]. 中国物理B, 2013, 22(10): 108502-108502.

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Analyses of temperature-dependent interface states, series resistances, and AC electrical conductivities of Al/p–Si and Al/Bi₄Ti₃O₁₂/p–Si structures by using the admittance spectroscopy method

Analyses of temperature-dependent interface states, series resistances, and AC electrical conductivities of Al/p–Si and Al/Bi₄Ti₃O₁₂/p–Si structures by using the admittance spectroscopy method

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