A comparison of the field emission characteristics of vertically aligned graphene sheets grown on different SiC substrates

doi:10.1088/1674-1056/22/10/107901

中国物理B ›› 2013, Vol. 22 ›› Issue (10): 107901-107901.doi: 10.1088/1674-1056/22/10/107901

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

A comparison of the field emission characteristics of vertically aligned graphene sheets grown on different SiC substrates

陈莲莲, 郭丽伟, 刘宇, 李治林, 黄郊, 芦伟

Research & Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

收稿日期:2012-04-09 修回日期:2013-05-06 出版日期:2013-08-30 发布日期:2013-08-30
基金资助:
Project supported by the National Key Basic Research Program of China (Grant No. 2011CB932700) and the National Natural Science Foundation of China (Grant Nos. 51272279, 51072223, and 50972162).

A comparison of the field emission characteristics of vertically aligned graphene sheets grown on different SiC substrates

Chen Lian-Lian (陈莲莲), Guo Li-Wei (郭丽伟), Liu Yu (刘宇), Li Zhi-Lin (李治林), Huang Jiao (黄郊), Lu Wei (芦伟)

Research & Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

Received:2012-04-09 Revised:2013-05-06 Online:2013-08-30 Published:2013-08-30
Contact: Guo Li-Wei E-mail:lwguo@iphy.ac.cn
Supported by:
Project supported by the National Key Basic Research Program of China (Grant No. 2011CB932700) and the National Natural Science Foundation of China (Grant Nos. 51272279, 51072223, and 50972162).

摘要/Abstract

摘要： The field emission (FE) properties of vertically aligned graphene sheets (VAGSs) grown on different SiC substrates are reported. The VAGSs grown on nonpolar SiC (10-10) substrate show an ordered alignment with the graphene basal plane-parallel to each other, and show better FE features, with a lower turn-on field and a larger field enhancement factor. The VAGSs grown on polar SiC (000-1) substrate reveal a random petaloid-shaped arrangement and stable current emission over 8 hours with a maximum emission current fluctuation of only 4%. The reasons behind the differing FE characteristics of the VAGSs on different SiC substrates are analyzed and discussed.

关键词: field emission, vertically aligned graphene sheets, SiC substrate

Abstract: The field emission (FE) properties of vertically aligned graphene sheets (VAGSs) grown on different SiC substrates are reported. The VAGSs grown on nonpolar SiC (10-10) substrate show an ordered alignment with the graphene basal plane-parallel to each other, and show better FE features, with a lower turn-on field and a larger field enhancement factor. The VAGSs grown on polar SiC (000-1) substrate reveal a random petaloid-shaped arrangement and stable current emission over 8 hours with a maximum emission current fluctuation of only 4%. The reasons behind the differing FE characteristics of the VAGSs on different SiC substrates are analyzed and discussed.

Key words: field emission, vertically aligned graphene sheets, SiC substrate

中图分类号: (Field emission, ionization, evaporation, and desorption)

79.70.+q

61.48.Gh (Structure of graphene)

陈莲莲, 郭丽伟, 刘宇, 李治林, 黄郊, 芦伟. A comparison of the field emission characteristics of vertically aligned graphene sheets grown on different SiC substrates[J]. 中国物理B, 2013, 22(10): 107901-107901.

Chen Lian-Lian (陈莲莲), Guo Li-Wei (郭丽伟), Liu Yu (刘宇), Li Zhi-Lin (李治林), Huang Jiao (黄郊), Lu Wei (芦伟). A comparison of the field emission characteristics of vertically aligned graphene sheets grown on different SiC substrates[J]. Chin. Phys. B, 2013, 22(10): 107901-107901.

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A comparison of the field emission characteristics of vertically aligned graphene sheets grown on different SiC substrates

A comparison of the field emission characteristics of vertically aligned graphene sheets grown on different SiC substrates

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