A novel sensitivity model for short nets

doi:10.1088/1674-1056/21/9/098503

中国物理B ›› 2012, Vol. 21 ›› Issue (9): 98503-098503.doi: 10.1088/1674-1056/21/9/098503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

A novel sensitivity model for short nets

刘士钢^{a b}, 王俊平^a, 苏永邦^b, 王乐^a

a School of Communication Engineering, Xidian University, Xi'an 710071, China;
b Microelectronics Institute, Xidian University, Xi'an 710071, China

收稿日期:2011-12-19 修回日期:2012-04-25 出版日期:2012-08-01 发布日期:2012-08-01
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61173088 and 61070143) and the Programme of Introducing Talents of Discipline to Universities (Grant No. B08038)

A novel sensitivity model for short nets

Liu Shi-Gang (刘士钢)^{a b}, Wang Jun-Ping (王俊平)^a, Su Yong-Bang (苏永邦)^b, Wang Le (王乐)^a

a School of Communication Engineering, Xidian University, Xi'an 710071, China;
b Microelectronics Institute, Xidian University, Xi'an 710071, China

Received:2011-12-19 Revised:2012-04-25 Online:2012-08-01 Published:2012-08-01
Contact: Liu Shi-Gang E-mail:shi72385588@163.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61173088 and 61070143) and the Programme of Introducing Talents of Discipline to Universities (Grant No. B08038)

摘要/Abstract

摘要： For modern processes at deep sub-micron technology node, yield design, especially the yield design at the stage of layout design is an important way to deal with the problem about manufacturability and yield. In order to reduce the yield loss caused by redundancy material defect, choice of nets to be optimized at first is an important step in the process of layout optimization. This paper provides a new sensitivity model for short net, which is net-based and reflects the size of the critical area between a single net and the nets around it. Since this model is based on a single net and includes the information of surrounding nets，the critical area between the single net and surrounding nets can be reduced at the same time. In this way, the efficiency of layout optimization becomes higher. According to experimental observations, this sensitivity model can be used to choose the position for optimization. Compared with the chip-area-based and basic-layout-based sensitivity models, our sensitivity model not only has higher efficiency, but also hold true for choosing the net to be optimized at first.

关键词: redundancy material defect, layout optimization, critical area, short sensitivity

Abstract: For modern processes at deep sub-micron technology node, yield design, especially the yield design at the stage of layout design is an important way to deal with the problem about manufacturability and yield. In order to reduce the yield loss caused by redundancy material defect, choice of nets to be optimized at first is an important step in the process of layout optimization. This paper provides a new sensitivity model for short net, which is net-based and reflects the size of the critical area between a single net and the nets around it. Since this model is based on a single net and includes the information of surrounding nets，the critical area between the single net and surrounding nets can be reduced at the same time. In this way, the efficiency of layout optimization becomes higher. According to experimental observations, this sensitivity model can be used to choose the position for optimization. Compared with the chip-area-based and basic-layout-based sensitivity models, our sensitivity model not only has higher efficiency, but also hold true for choosing the net to be optimized at first.

Key words: redundancy material defect, layout optimization, critical area, short sensitivity

中图分类号: (Computer-aided design of microcircuits; layout and modeling)

85.40.Bh

61.72.-y (Defects and impurities in crystals; microstructure)

刘士钢, 王俊平, 苏永邦, 王乐. A novel sensitivity model for short nets[J]. 中国物理B, 2012, 21(9): 98503-098503.

Liu Shi-Gang (刘士钢), Wang Jun-Ping (王俊平), Su Yong-Bang (苏永邦), Wang Le (王乐). A novel sensitivity model for short nets[J]. Chin. Phys. B, 2012, 21(9): 98503-098503.

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A novel sensitivity model for short nets

A novel sensitivity model for short nets

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