Activation of silicon quantum dots for emission

doi:10.1088/1674-1056/21/9/094207

中国物理B ›› 2012, Vol. 21 ›› Issue (9): 94207-094207.doi: 10.1088/1674-1056/21/9/094207

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇下一篇

Activation of silicon quantum dots for emission

黄伟其^a, 苗信建^a, 黄忠梅^a, 刘世荣^b, 秦朝建^b

a Key Laboratory of Photoelectron Technology and Application, Institute of Nanophotonic Physics, Guizhou University, Guiyang 550025, China;
b State Key Laboratory of Ore Deposit Geochemistry, Institute of Geochemistry, Chinese academy of Sciences, Guiyang 550003, China

收稿日期:2012-01-28 修回日期:2012-02-22 出版日期:2012-08-01 发布日期:2012-08-01
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 60966002) and the National Key Laboratory of Surface Physics, Fudan University, China.

Activation of silicon quantum dots for emission

Huang Wei-Qi (黄伟其)^a, Miao Xin-Jian (苗信建)^a, Huang Zhong-Mei (黄忠梅)^a, Liu Shi-Rong (刘世荣)^b, Qin Chao-Jian (秦朝建)^b

a Key Laboratory of Photoelectron Technology and Application, Institute of Nanophotonic Physics, Guizhou University, Guiyang 550025, China;
b State Key Laboratory of Ore Deposit Geochemistry, Institute of Geochemistry, Chinese academy of Sciences, Guiyang 550003, China

Received:2012-01-28 Revised:2012-02-22 Online:2012-08-01 Published:2012-08-01
Contact: Huang Wei-Qi, Liu Shi-Rong E-mail:WQHuang2001@yahoo.com; Shirong@yahoo.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 60966002) and the National Key Laboratory of Surface Physics, Fudan University, China.

摘要/Abstract

摘要： Emission of silicon quantum dots is weak when their surface is passivated well. Oxygen or nitrogen on surface of silicon quantum dots can break the passivation to form localized electronic states in band gap to generate active centers where stronger emission occurs. From this point of view, we can build up radiative matters for emission. By controlling the surface bonds of silicon quantum dots, emissions of various wavelengths can be obtained. Our experimental results demonstrate that annealing is important in treatment of the activation, and stimulated emissions at about 600 and 700 nm take place on active silicon quantum dots.

关键词: activation for emission, silicon quantum dots, localized states

Abstract: Emission of silicon quantum dots is weak when their surface is passivated well. Oxygen or nitrogen on surface of silicon quantum dots can break the passivation to form localized electronic states in band gap to generate active centers where stronger emission occurs. From this point of view, we can build up radiative matters for emission. By controlling the surface bonds of silicon quantum dots, emissions of various wavelengths can be obtained. Our experimental results demonstrate that annealing is important in treatment of the activation, and stimulated emissions at about 600 and 700 nm take place on active silicon quantum dots.

Key words: activation for emission, silicon quantum dots, localized states

中图分类号: (Lasers)

42.55.-f

68.65.Hb (Quantum dots (patterned in quantum wells)) 78.45.+h (Stimulated emission) 78.55.Mb (Porous materials)

黄伟其, 苗信建, 黄忠梅, 刘世荣, 秦朝建. Activation of silicon quantum dots for emission[J]. 中国物理B, 2012, 21(9): 94207-094207.

Huang Wei-Qi (黄伟其), Miao Xin-Jian (苗信建), Huang Zhong-Mei (黄忠梅), Liu Shi-Rong (刘世荣), Qin Chao-Jian (秦朝建). Activation of silicon quantum dots for emission[J]. Chin. Phys. B, 2012, 21(9): 94207-094207.

参考文献 9

[1]	Pavesi L, Negro L D, Mazzoleni C, Franzo G and Prioto E 2000 Nature 408 440
[2]	Fauchet P M, Ruan J, Chen H, Pavesi L, Negro L D, Cazzaneli M, Elliman R G, Smith N and Smoc M 2005 Opt. Mater. 27 745
[3]	Yang Y, Wang C, Yang R D, Li L, Xiong F and Bao J M 2009 Chin. Phys. B 18 4906
[4]	Huang W Q, Jin F, Wang H X, Xu L, Wu K Y, Liu S R and Qin C J 2008 Appl. Phys. Lett. 92 221910
[5]	Rong H S, Liu A S, Jones R C, Cohen O, Hak D, Nicolaescu R, Fang A and Paniccia M 2005 Nature 433 292
[6]	Faraci G, Gibilisco S, Pennisi A R, Franzo G, Rosa S L and Lozzi L 2008 Phys. Rev. B 78 245425
[7]	Lockwood R, McFarlane S, Nunez J R R, Wang X Y, Veinot J G C and Meldrum A 2011 J. Lummin. 131 1530
[8]	Wolkin M V, Jorne J and Fauchet P M 1999 Phys. Rev. Lett. 82 197
[9]	Huang W Q, Zhang R T, Wang H X, Jin F, Xu L, Qin S J, Wu K Y, Liu S R and Qin C J 2008 Opt. Commun. 281 5229

Activation of silicon quantum dots for emission

Activation of silicon quantum dots for emission

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 9

相关文章 4

Metrics

本文评价

推荐阅读 0

[1]	谢阳, 胡智健, 丁文浩, 吕小龙, 谢航. One-dimensional method of investigating the localized states in armchair graphene-like nanoribbons with defects[J]. 中国物理B, 2017, 26(12): 127310-127310.
[2]	黄伟其, 尹君, 周年杰, 黄忠梅, 苗信建, 陈汉琼, 苏琴, 刘世荣, 秦朝建. Curved surface effect and emission on silicon nanostructures[J]. 中国物理B, 2013, 22(10): 104204-104204.
[3]	黄伟其, 陈汉琼, 苏琴, 刘世荣, 秦朝建. Activation of silicon quantum dots and coupling between the active centre and the defect state of the photonic crystal in a nanolaser[J]. 中国物理B, 2012, 21(6): 64209-064209.
[4]	李国栋, 黄永念. Different localized states of travelling-wave convection in a rectangular container[J]. 中国物理B, 2006, 15(12): 2984-2988.