中国物理B ›› 2012, Vol. 21 ›› Issue (3): 37303-037303.doi: 10.1088/1674-1056/21/3/037303

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

张现军,杨银堂,段宝兴,柴常春,宋坤,陈斌   

  • 收稿日期:2012-03-31 修回日期:2012-03-31 出版日期:2012-02-15 发布日期:2012-02-15
  • 通讯作者: 张现军,xianjun_zhang@yahoo.com.cn E-mail:xianjun_zhang@yahoo.com.cn

Modeling of the drain-induced barrier lowering effect and optimization for a dual-channel 4H silicon carbide metal semiconductor field effect transistor

Zhang Xian-Jun(张现军)†, Yang Yin-Tang(杨银堂), Duan Bao-Xing(段宝兴), Chai ChangChun(柴常春), Song Kun(宋坤), and Chen-Bin(陈斌)   

  1. Key Laboratory of Wide Band Gap Semiconductor Materials and Devices of the Ministry of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
  • Received:2012-03-31 Revised:2012-03-31 Online:2012-02-15 Published:2012-02-15
  • Contact: Zhang Xian-Jun,xianjun_zhang@yahoo.com.cn E-mail:xianjun_zhang@yahoo.com.cn
  • Supported by:
    Project supported by the Pre-research Foundation from the National Ministries and Commissions of China (Grant No. 51308030201).

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Abstract: A new analytical model to describe the drain-induced barrier lowering (DIBL) effect has been obtained by solving the two-dimensional (2D) Poisson's equation for the dual-channel 4H-SiC MESFET (DCFET). Using this analytical model, we calculate the threshold voltage shift and the sub-threshold slope factor of the DCFET, which characterize the DIBL effect. The results show that they are significantly dependent on the drain bias, gate length as well as the thickness and doping concentration of the two channel layers. Based on this analytical model, the structure parameters of the DCFET have been optimized in order to suppress the DIBL effect and improve the performance.

Key words: drain-induced barrier lowering effect, Poisson's equation, metal semiconductor field effect transistor

中图分类号:  (Metal-to-metal contacts)

  • 73.40.Jn
85.30.Tv (Field effect devices) 85.30.De (Semiconductor-device characterization, design, and modeling)