Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon

doi:10.1088/1674-1056/21/1/017805

中国物理B ›› 2012, Vol. 21 ›› Issue (1): 17805-017805.doi: 10.1088/1674-1056/21/1/017805

Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon

胡炜玄, 成步文, 薛春来, 张广泽, 苏少坚, 左玉华, 王启明

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2011-03-23 修回日期:2011-09-15 出版日期:2012-01-15 发布日期:2012-01-20
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61036003, 61176013, 61177038, and 60906035), and the High Technology Research and Development Program of China (Grant No. 2011AA010302).

Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon

Hu Wei-Xuan(胡炜玄), Cheng Bu-Wen(成步文)^†, Xue Chun-Lai(薛春来), Zhang Guang-Ze(张广泽), Su Shao-Jian(苏少坚), Zuo Yu-Hua(左玉华), and Wang Qi-Ming(王启明)

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2011-03-23 Revised:2011-09-15 Online:2012-01-15 Published:2012-01-20
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61036003, 61176013, 61177038, and 60906035), and the High Technology Research and Development Program of China (Grant No. 2011AA010302).

摘要/Abstract

摘要： Strain-compensated Ge/Si_0.15Ge_0.85 multiple quantum wells were grown on an Si_0.1>Ge_0.9 virtual substrate using ultrahigh vacuum chemical vapor deposition technology on an n⁺-Si(001) substrate. Photoluminescence measurements were performed at room temperature, and the quantum confinement effect of the direct-bandgap transitions of a Ge quantum well was observed, which is in good agreement with the calculated results. The luminescence mechanism was discussed by recombination rate analysis and the temperature dependence of the luminescence spectrum.

关键词: Ge, multiple quantum wells, strain compensated

Abstract: Strain-compensated Ge/Si_0.15Ge_0.85 multiple quantum wells were grown on an Si_0.1Ge_0.9 virtual substrate using ultrahigh vacuum chemical vapor deposition technology on an n⁺-Si(001) substrate. Photoluminescence measurements were performed at room temperature, and the quantum confinement effect of the direct-bandgap transitions of a Ge quantum well was observed, which is in good agreement with the calculated results. The luminescence mechanism was discussed by recombination rate analysis and the temperature dependence of the luminescence spectrum.

Key words: Ge, multiple quantum wells, strain compensated

中图分类号: (Photoluminescence, properties and materials)

78.55.-m

73.61.Cw (Elemental semiconductors)

胡炜玄, 成步文, 薛春来, 张广泽, 苏少坚, 左玉华, 王启明. Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon[J]. 中国物理B, 2012, 21(1): 17805-017805.

Hu Wei-Xuan(胡炜玄), Cheng Bu-Wen(成步文), Xue Chun-Lai(薛春来), Zhang Guang-Ze(张广泽), Su Shao-Jian(苏少坚), Zuo Yu-Hua(左玉华), and Wang Qi-Ming(王启明) . Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon[J]. Chin. Phys. B, 2012, 21(1): 17805-017805.

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Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon

Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon

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