中国物理B ›› 2011, Vol. 20 ›› Issue (6): 67302-067302.doi: 10.1088/1674-1056/20/6/067302

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Effect of compensation doping on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattice photodetectors

王永宾, 徐云, 张宇, 迂修, 宋国峰, 陈良惠   

  1. Laboratory of Nano-Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2010-12-27 修回日期:2011-01-25 出版日期:2011-06-15 发布日期:2011-06-15
  • 基金资助:
    Project supported by the Natural Science Foundation of Beijing (Grant No. 4112058), the National Natural Science Foundation of China (Grant Nos. 60906027, 60906028, 61036010, and 60636030), and the Open Fund of Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), Ministry of Education of China.

Effect of compensation doping on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattice photodetectors

Wang Yong-Bin (王永宾), Xu Yun (徐云), Zhang Yu (张宇), Yu Xiu (迂修), Song Guo-Feng (宋国峰), Chen Liang-Hui (陈良惠)   

  1. Laboratory of Nano-Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2010-12-27 Revised:2011-01-25 Online:2011-06-15 Published:2011-06-15
  • Supported by:
    Project supported by the Natural Science Foundation of Beijing (Grant No. 4112058), the National Natural Science Foundation of China (Grant Nos. 60906027, 60906028, 61036010, and 60636030), and the Open Fund of Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), Ministry of Education of China.

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摘要： This paper presents a theoretical study on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattices with different beryllium concentrations in the InAs layer of the active region. Dark current, resistance-area product, absorption coefficient and quantum efficiency characteristics are thoroughly examined. The superlattice is residually n-type and it becomes slightly p-type by varying beryllium-doping concentrations, which improves its electrical performances. The optical performances remain almost unaffected with relatively low p-doping levels and begin to deteriorate with increasing p-doping density. To make a compromise between the electrical and optical performances, the photodetector with a doping concentration of 3 × 1015cm-3 in the active region is believed to have the best overall performances.

Abstract: This paper presents a theoretical study on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattices with different beryllium concentrations in the InAs layer of the active region. Dark current, resistance-area product, absorption coefficient and quantum efficiency characteristics are thoroughly examined. The superlattice is residually n-type and it becomes slightly p-type by varying beryllium-doping concentrations, which improves its electrical performances. The optical performances remain almost unaffected with relatively low p-doping levels and begin to deteriorate with increasing p-doping density. To make a compromise between the electrical and optical performances, the photodetector with a doping concentration of 3 × 1015cm-3 in the active region is believed to have the best overall performances.

Key words: InAs/GaSb superlattices, p-doping concentration, electrical and optical properties

中图分类号:  (Superlattices)

  • 73.21.Cd
78.20.Bh (Theory, models, and numerical simulation)