Electronic band structure of a type-II 'W' quantum well calculated by an eight-band k·p model

doi:10.1088/1674-1056/20/3/030507

中国物理B ›› 2011, Vol. 20 ›› Issue (3): 30507-030507.doi: 10.1088/1674-1056/20/3/030507

Electronic band structure of a type-II 'W' quantum well calculated by an eight-band k·p model

谷永先¹, 迂修², 王青², 韦欣², 陈良惠²

(1)Key Laboratory of Semiconductor Materials, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (2)Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2010-08-31 修回日期:2010-10-04 出版日期:2011-03-15 发布日期:2011-03-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 60636030).

Electronic band structure of a type-II 'W' quantum well calculated by an eight-band k·p model

Yu Xiu(迂修)^a), Gu Yong-Xian(谷永先)^b), Wang Qing(王青)^a)†, Wei Xin(韦欣)^a), and Chen Liang-Hui(陈良惠)^a)

^a Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; ^bKey Laboratory of Semiconductor Materials, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2010-08-31 Revised:2010-10-04 Online:2011-03-15 Published:2011-03-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 60636030).

摘要/Abstract

摘要： In this paper, we present an investigation of type-II 'W' quantum wells for the InAs/Ga_1-xIn_xSb/AlSb family, where 'W' denotes the conduction profile of the material. We focus our attention on using the eight-band k?p model to calculate the band structures within the framework of finite element method. For the sake of clarity, the simulation in this paper is simplified and based on only one period---AlSb/InAs/Ga_1-xIn_xSb/InAs/AlSb. The obtained numerical results include the energy levels and wavefunctions of carriers. We discuss the variations of the electronic properties by changing several important parameters, such as the thickness of either InAs or Ga_1-xIn_xSb layer and the alloy composition in Ga_1-xIn_xSb separately. In the last part, in order to compare the eight-band k?p model, we recalculate the conduction bands of the 'W' structure using the one-band k?p model and then discuss the difference between the two results, showing that conduction bands are strongly coupled with valence bands in the narrow band gap structure. The in-plane energy dispersions, which illustrate the suppression of the Auger recombination process, are also obtained.

关键词: type-II 'W' quantum well, Burt-Foreman Hamiltonian, finite element methods

Abstract: In this paper, we present an investigation of type-II 'W' quantum wells for the InAs/Ga_1-xIn_xSb/AlSb family, where 'W' denotes the conduction profile of the material. We focus our attention on using the eight-band k ·p model to calculate the band structures within the framework of finite element method. For the sake of clarity, the simulation in this paper is simplified and based on only one period–AlSb/InAs/Ga_1-xIn_xSb/InAs/AlSb. The obtained numerical results include the energy levels and wavefunctions of carriers. We discuss the variations of the electronic properties by changing several important parameters, such as the thickness of either InAs or Ga_1-xIn_xSb layer and the alloy composition in Ga_1-xIn_xSb separately. In the last part, in order to compare the eight-band k ·p model, we recalculate the conduction bands of the 'W' structure using the one-band k ·p model and then discuss the difference between the two results, showing that conduction bands are strongly coupled with valence bands in the narrow band gap structure. The in-plane energy dispersions, which illustrate the suppression of the Auger recombination process, are also obtained.

Key words: type-II 'W' quantum well, Burt-Foreman Hamiltonian, finite element methods

中图分类号:

05.65.tb

73.21.Fg (Quantum wells) 73.20.-r (Electron states at surfaces and interfaces)

迂修, 谷永先, 王青, 韦欣, 陈良惠. Electronic band structure of a type-II 'W' quantum well calculated by an eight-band k·p model[J]. 中国物理B, 2011, 20(3): 30507-030507.

Yu Xiu(迂修), Gu Yong-Xian(谷永先), Wang Qing(王青), Wei Xin(韦欣), and Chen Liang-Hui(陈良惠). Electronic band structure of a type-II 'W' quantum well calculated by an eight-band k·p model[J]. Chin. Phys. B, 2011, 20(3): 30507-030507.

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参考文献 19

[1]	Malin J I, Meyer J R, Felix C L, Lindle J R, Goldberg L, Hoffman C A, Lin C H, Chang P C, Murry S J, Yang R Q and Pei S S 1996 Appl. Phys. Lett. 68 2976
[2]	Yin Z Y and Tang X H 2007 Solid-State Electron. 51 6
[3]	Lei W and Jagadish C 2008 J. Appl. Phys. 104 091101
[4]	Gassenq A, Boissier G, Grech P, Narcy G, Baranov A N and Tourni 'e E 2009 Electron. Lett. 45
[5]	Hong B H, Rybchenko S I, Itskevich I E, Haywood S K, Intartaglia R, Tasco B, Rain`o G and De-Giorgi M 2009 Phys. Rev. B 79 165323
[6]	Kim M, Canedy C L, Bewley W W, Kim C S, Lindle J R, Abell J, Vurgaftman I and Meyer J R 2008 Appl. Phys. Lett. 93 191110
[7]	Canedy C L, Bewley W W, Lindle J R, Kim C S, Kim M, Vurgaftman I and Meyer J R 2006 J. Electron. Mater. 35 453
[8]	Meyer J R, Hoffman C A, Bartoli F J and Ram-Mohan L R 1995 Appl. Phys. Lett. 67 757
[9]	Flatt'e M E, Olesberg J T, Anson S A, Boggess T F, Hasenberg T C, Miles R H and Grein C H 1997 Appl. Phys. Lett. 70 3212
[10]	Schliwa A 2007 Electronic Properties of Self-organized Quantum Dots Ph.D. Thesis (Berlin: The Technical University of Berlin)
[11]	Stier O 2000 Electronic and Optical Properties of Quantum Dots and Wires (Berlin: Wissenschaft and Technik Verlag
[12]	Foreman B A 1997 Phys. Rev. B 56 R 12748
[13]	Burt M G 1992 J. Phys.: Condens. Matter 4 6651
[14]	Vurgaftman I, Meyer J R and Ram-Mohan L R 2001 J. Appl. Phys. 89 5815
[15]	Gu Y X, Yang T, Ji H M, Xu P F and Wang Z G 2010 Chin. Phys. B 19 088102
[16]	Veprek R G, Steiger S and Witzigmann B 2007 Phys. Rev. B 76 165320
[17]	Ram-Mohan L R and Meyer J R 1995 J. Nonlinear. Opt. Phys. 4 191
[18]	Chang C S and Chuang S L 1995 IEEE J. Sel. Top. Quantum. Electron. 1 218
[19]	Chuang S L 1991 Phys. Rev. B bf43 9658 endfootnotesize

Electronic band structure of a type-II 'W' quantum well calculated by an eight-band k·p model

Electronic band structure of a type-II 'W' quantum well calculated by an eight-band k·p model

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