中国物理B ›› 2009, Vol. 18 ›› Issue (6): 2576-2581.doi: 10.1088/1674-1056/18/6/076

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The electrical transport behavior of Zn-treated Zn1-xMnxO bulks

彭先德, 朱涛, 王芳卫, 黄万国, 成昭华   

  1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • 收稿日期:2009-01-06 修回日期:2009-03-06 出版日期:2009-06-20 发布日期:2009-06-20

The electrical transport behavior of Zn-treated Zn1-xMnxO bulks

Peng Xian-De(彭先德), Zhu Tao(朱涛)†, Wang Fang-Wei(王芳卫), Huang Wan-Guo(黄万国), and Cheng Zhao-Hua(成昭华)   

  1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • Received:2009-01-06 Revised:2009-03-06 Online:2009-06-20 Published:2009-06-20

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摘要： Zn1-xMnxO bulks have been prepared by the solid state reaction method. Zn vapor treatment has been carried out to adjust the carrier concentration. For the Zn treated Zn1-xMnxO bulks, analysis of the temperature dependence of resistance and the field dependence of magnetoresistance demonstrates that the bound magnetic polarons (BMPs) play an important role in the electrical transport behavior. The hopping of BMPs dominates the electrical conduction behavior when temperature is below 170~K. At low temperature, paramagnetic Zn1-xMnxO bulks show a large magnetoresistance effect, which indicates that the large magnetoresistance effect in transition-metal doped ZnO dilute magnetic semiconductors is independent of their magnetic states.

关键词: Mn doped ZnO, x-ray, resistance, magnetoresistance

Abstract: Zn1-xMnxO bulks have been prepared by the solid state reaction method. Zn vapor treatment has been carried out to adjust the carrier concentration. For the Zn treated Zn1-xMnxO bulks, analysis of the temperature dependence of resistance and the field dependence of magnetoresistance demonstrates that the bound magnetic polarons (BMPs) play an important role in the electrical transport behavior. The hopping of BMPs dominates the electrical conduction behavior when temperature is below 170 K. At low temperature, paramagnetic Zn1-xMnxO bulks show a large magnetoresistance effect, which indicates that the large magnetoresistance effect in transition-metal doped ZnO dilute magnetic semiconductors is independent of their magnetic states.

Key words: Mn doped ZnO, x-ray, resistance, magnetoresistance

中图分类号:  (III-V and II-VI semiconductors)

  • 72.80.Ey
71.38.-k (Polarons and electron-phonon interactions) 72.20.My (Galvanomagnetic and other magnetotransport effects) 75.20.Ck (Nonmetals) 75.50.Pp (Magnetic semiconductors)