中国物理B ›› 2009, Vol. 18 ›› Issue (2): 763-767.doi: 10.1088/1674-1056/18/2/058
Thermal analytic model of current gain for bipolar junction transistor-bipolar static induction transistor compound device
张有润, 张波, 李泽宏, 赖昌菁, 李肇基
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Thermal analytic model of current gain for bipolar junction transistor-bipolar static induction transistor compound device
Zhang You-Run(张有润)†, Zhang Bo(张波), Li Ze-Hong(李泽宏), Lai Chang-Jin(赖昌菁), and Li Zhao-Ji(李肇基)
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
摘要： This paper proposes a thermal analytical model of current gain for bipolar junction transistor-bipolar static induction transistor (BJT-BSIT) compound device in the low current operation. It also proposes a best thermal compensating factor to the compound device that indicates the relationship between the thermal variation rate of current gain and device structure. This is important for the design of compound device to be optimized. Finally, the analytical model is found to be in good agreement with numerical simulation and experimental results. The test results demonstrate that thermal variation rate of current gain is below 10% in 25℃--85℃ and 20{\%} in -55℃--25℃.
中图分类号: (Bipolar transistors)
- 85.30.Pq