中国物理B ›› 2008, Vol. 17 ›› Issue (5): 1854-1857.doi: 10.1088/1674-1056/17/5/051
• PHYSICS OF GASES, PLASMAS, AND ELECTRIC DISCHARGES • 上一篇 下一篇
马明瑞, 陈钰玲, 王立敏, 王 长
Ma Ming-Rui(马明瑞), Chen Yu-Ling(陈钰玲), Wang Li-Min(王立敏), and Wang Chang(王长)†
摘要: This paper theoretically studies the high-electron-mobility transistor (HEMT) driven by the terahertz radiation. It calculates the gate-to-source/drain admittance and the detection responsivity of the HEMT as a function of the signal frequency. It finds that the peaks of the admittances and the responsivity show redshift, and the heights of the peaks decrease with increasing the lengths of the source-to-gate and gate-to-drain spacing. Such phenomena may be useful in designing different HEMTs by utilizing the effects associated with the plasma oscillations excitation.
中图分类号: (Electrostatic waves and oscillations (e.g., ion-acoustic waves))