中国物理B ›› 2008, Vol. 17 ›› Issue (5): 1854-1857.doi: 10.1088/1674-1056/17/5/051

• PHYSICS OF GASES, PLASMAS, AND ELECTRIC DISCHARGES • 上一篇    下一篇

Resonant detection of terahertz radiation utilizing plasma waves in high-electron-mobility transistors

马明瑞, 陈钰玲, 王立敏, 王 长   

  1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences and Graduate School of Chinese Academy of Sciences, Shanghai 200050, China
  • 收稿日期:2007-05-16 修回日期:2007-08-24 出版日期:2008-05-20 发布日期:2008-05-20
  • 基金资助:
    Project supported by the National Fund for Distinguished Young Scholars of China (Grant No 60425415), the National Science Foundation of China (Grant No 60721004), the Shanghai Municipal Commission of Science and Technology, China (Grant Nos 06DJ14008 and

Resonant detection of terahertz radiation utilizing plasma waves in high-electron-mobility transistors

Ma Ming-Rui(马明瑞), Chen Yu-Ling(陈钰玲), Wang Li-Min(王立敏), and Wang Chang(王长)†   

  1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences and Graduate School of Chinese Academy of Sciences, Shanghai 200050, China
  • Received:2007-05-16 Revised:2007-08-24 Online:2008-05-20 Published:2008-05-20
  • Supported by:
    Project supported by the National Fund for Distinguished Young Scholars of China (Grant No 60425415), the National Science Foundation of China (Grant No 60721004), the Shanghai Municipal Commission of Science and Technology, China (Grant Nos 06DJ14008 and

PDF (PC)

634

赞

摘要： This paper theoretically studies the high-electron-mobility transistor (HEMT) driven by the terahertz radiation. It calculates the gate-to-source/drain admittance and the detection responsivity of the HEMT as a function of the signal frequency. It finds that the peaks of the admittances and the responsivity show redshift, and the heights of the peaks decrease with increasing the lengths of the source-to-gate and gate-to-drain spacing. Such phenomena may be useful in designing different HEMTs by utilizing the effects associated with the plasma oscillations excitation.

Abstract: This paper theoretically studies the high-electron-mobility transistor (HEMT) driven by the terahertz radiation. It calculates the gate-to-source/drain admittance and the detection responsivity of the HEMT as a function of the signal frequency. It finds that the peaks of the admittances and the responsivity show redshift, and the heights of the peaks decrease with increasing the lengths of the source-to-gate and gate-to-drain spacing. Such phenomena may be useful in designing different HEMTs by utilizing the effects associated with the plasma oscillations excitation.

Key words: terahertz radiation, resonant, HEMT

中图分类号:  (Electrostatic waves and oscillations (e.g., ion-acoustic waves))

  • 52.35.Fp
52.75.-d (Plasma devices) 85.30.Tv (Field effect devices)