中国物理B ›› 2008, Vol. 17 ›› Issue (4): 1394-1399.doi: 10.1088/1674-1056/17/4/040
汪建华1, 杨仕娥2, 卢景霄2, 郜小勇2, 谷景华2, 郑文2, 赵尚丽2, 陈永生3
Chen Yong-Sheng (陈永生)a)b)†, Yang Shi-E(杨仕娥)a), Wang Jian-Hua(汪建华)c), Lu Jing-Xiao(卢景霄)a), Gao Xiao-Yong(郜小勇)a), Gu Jin-Hua(谷景华)a), Zheng Wen(郑文)a), and Zhao Shang-Li(赵尚丽)a)
摘要: Using diborane as doping gas, p-doped $\mu $c-Si:H layers are deposited by using the plasma enhanced chemical vapour deposition (PECVD) technology. The effects of deposition pressure and plasma power on the growth and the properties of $\mu $c-Si:H layers are investigated. The results show that the deposition rate, the electrical and the structural properties are all strongly dependent on deposition pressure and plasma power. Boron-doped $\mu $c-Si:H films with a dark conductivity as high as 1.42\,$\Omega ^{ - 1}\cdot$cm$^{ - 1}$ and a crystallinity of above 50{\%} are obtained. With this p-layer, $\mu $c-Si:H solar cells are fabricated. In addition, the mechanism for the effects of deposition pressure and plasma power on the growth and the properties of boron-doped $\mu $c-Si:H layers is discussed.
中图分类号: (Nucleation and growth)