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Dong-Dong Cao(曹冬冬), Xue-Fei Pan(潘雪飞), Jun Zhang(张军), and Xue-Shen Liu(刘学深). Spectral shift of solid high-order harmonics from different channels in a combined laser field[J]. 中国物理B, 2023, 32(3): 34204-034204. |
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Yu-De Niu(牛毓德), Yu-Zhen Wang(汪玉珍), Kai-Ming Zhu(朱凯明), Wang-Gui Ye(叶王贵), Zhe Feng(冯喆), Hui Liu(柳挥), Xin Yi(易鑫), Yi-Huan Wang(王怡欢), and Xuan-Yi Yuan(袁轩一). Thermally enhanced photoluminescence and temperature sensing properties of Sc2W3O12:Eu3+ phosphors[J]. 中国物理B, 2023, 32(2): 28703-028703. |
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Xue-Fei Li(李雪飞), Wen-Xian Yang(杨文献), Jun-Hua Long(龙军华), Ming Tan(谭明), Shan Jin(金山), Dong-Ying Wu(吴栋颖), Yuan-Yuan Wu(吴渊渊), and Shu-Long Lu(陆书龙). Electroluminescence explored internal behavior of carriers in InGaAsP single-junction solar cell[J]. 中国物理B, 2023, 32(1): 17801-017801. |
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Siwen You(游思雯), Ziyi Shao(邵子依), Xiao Guo(郭晓), Junjie Jiang(蒋俊杰), Jinxin Liu(刘金鑫), Kai Wang(王凯), Mingjun Li(李明君), Fangping Ouyang(欧阳方平), Chuyun Deng(邓楚芸), Fei Song(宋飞), Jiatao Sun(孙家涛), and Han Huang(黄寒). Growth behaviors and emission properties of Co-deposited MAPbI3 ultrathin films on MoS2[J]. 中国物理B, 2023, 32(1): 17901-017901. |
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Qian-Qian Gong(宫倩倩), Yun-Long Zhao(赵云龙), Qi Zhang(张奇), Chun-Yong Hu(胡春永), Teng-Fei Liu(刘腾飞), Hai-Feng Zhang(张海峰), Guang-Chao Yin(尹广超)†, and Mei-Ling Sun(孙美玲)‡. High-quality CdS quantum dots sensitized ZnO nanotube array films for superior photoelectrochemical performance[J]. 中国物理B, 2022, 31(9): 98103-098103. |
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Yu-Chun Liu(刘玉春), Xin Tan(谭欣), Tian-Ci Shen(沈天赐), and Fu-Xing Gu(谷付星). Enhanced photoluminescence of monolayer MoS2 on stepped gold structure[J]. 中国物理B, 2022, 31(8): 87803-087803. |
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Zein K Heiba, Mohamed Bakr Mohamed, Noura M Farag, and Ali Badawi. Exploration of structural, optical, and photoluminescent properties of (1-x)NiCo2O4/xPbS nanocomposites for optoelectronic applications[J]. 中国物理B, 2022, 31(6): 67801-067801. |
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Ghfoor Muhammad, Imran Murtaza, Rehan Abid, and Naeem Ahmad. Effect of different catalysts and growth temperature on the photoluminescence properties of zinc silicate nanostructures grown via vapor-liquid-solid method[J]. 中国物理B, 2022, 31(5): 57801-057801. |
[9] |
Jian-Min Wu(吴建民), Li-Hui Li(黎立辉), Wei-Hao Zheng(郑玮豪), Bi-Yuan Zheng(郑弼元), Zhe-Yuan Xu(徐哲元), Xue-Hong Zhang(张学红), Chen-Guang Zhu(朱晨光), Kun Wu(吴琨), Chi Zhang(张弛), Ying Jiang(蒋英),Xiao-Li Zhu(朱小莉), and Xiu-Juan Zhuang(庄秀娟). Exciton luminescence and many-body effect of monolayer WS2 at room temperature[J]. 中国物理B, 2022, 31(5): 57803-057803. |
[10] |
Ning Li(李宁), Xin Li(李鑫), Ming-Yue Zhang(张明越), Jing-Ying Miao(苗景迎), Shen-Cheng Fu(付申成), and Xin-Tong Zhang(张昕彤). Emerging of Ag particles on ZnO nanowire arrays for blue-ray hologram storage[J]. 中国物理B, 2022, 31(3): 36101-036101. |
[11] |
Yinzhe Liu(刘寅哲), Kewei Liu(刘可为), Jialin Yang(杨佳霖), Zhen Cheng(程祯), Dongyang Han(韩冬阳), Qiu Ai(艾秋), Xing Chen(陈星), Yongxue Zhu(朱勇学), Binghui Li(李炳辉), Lei Liu(刘雷), and Dezhen Shen(申德振). Boosting the performance of crossed ZnO microwire UV photodetector by mechanical contact homo-interface barrier[J]. 中国物理B, 2022, 31(10): 106101-106101. |
[12] |
Peng-Yu Zhou(周鹏宇), Xiu-Ming Dou(窦秀明), Bao-Quan Sun(孙宝权), Ren-Qin Dou(窦仁琴), Qing-Li Zhang(张庆礼), Bao Liu(刘鲍), Pu-Geng Hou(侯朴赓), Kai-Lin Chi(迟凯粼), and Kun Ding(丁琨). Pressure- and temperature-dependent luminescence from Tm3+ ions doped in GdYTaO4[J]. 中国物理B, 2022, 31(1): 17101-017101. |
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Xiao-Bo He(何小波), Hua-Tian Hu(胡华天), Ji-Bo Tang(唐继博), Guo-Zhen Zhang(张国桢), Xue Chen(陈雪), Jun-Jun Shi(石俊俊), Zhen-Wei Ou(欧振伟), Zhi-Feng Shi(史志锋), Shun-Ping Zhang(张顺平), Chang Liu(刘昌), and Hong-Xing Xu(徐红星). Uniform light emission from electrically driven plasmonic grating using multilayer tunneling barriers[J]. 中国物理B, 2022, 31(1): 17803-017803. |
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Fu-Jian Ge(葛付建), Hui Peng(彭辉), Ye Tian(田野), Xiao-Yue Fan(范晓跃), Shuai Zhang(张帅), Xian-Xin Wu(吴宪欣), Xin-Feng Liu(刘新风), and Bing-Suo Zou(邹炳锁). Magnetic polaron-related optical properties in Ni(II)-doped CdS nanobelts: Implication for spin nanophotonic devices[J]. 中国物理B, 2022, 31(1): 17802-017802. |
[15] |
Chi Sun(孙驰), Linyuan Zhao(赵林媛), Tingting Hao(郝婷婷), Renrong Liang(梁仁荣), Haitao Ye(叶海涛), Junjie Li(李俊杰), and Changzhi Gu(顾长志). Three-dimensional vertical ZnO transistors with suspended top electrodes fabricated by focused ion beam technology[J]. 中国物理B, 2022, 31(1): 16801-016801. |