中国物理B ›› 2007, Vol. 16 ›› Issue (6): 1790-1795.doi: 10.1088/1009-1963/16/6/053

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Photoluminescence and electroluminescence properties of ZnO films on p-type silicon wafers

王菲菲1, 曹立1, 刘瑞斌1, 潘安练1, 邹炳锁2   

  1. (1)Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China; (2)Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;Micro--Nano Technologies Research Center, Hunan University, Changsha 410082, China
  • 收稿日期:2006-10-26 修回日期:2006-12-29 出版日期:2007-06-20 发布日期:2007-06-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 20173073), National 973 Project (Grant No 2002CB713802), Nano- and Bio-device Key Project of CAS, 985 Project of Hunan University.

Photoluminescence and electroluminescence properties of ZnO films on p-type silicon wafers

Wang Fei-Fei(王菲菲)a), Cao Li(曹立)a), Liu Rui-Bin(刘瑞斌)a), Pan An-Lian(潘安练)a), and Zou Bing-Suo(邹炳锁)a) b) †   

  1. a Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China; b Micro--Nano Technologies Research Center, Hunan University, Changsha 410082, China
  • Received:2006-10-26 Revised:2006-12-29 Online:2007-06-20 Published:2007-06-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 20173073), National 973 Project (Grant No 2002CB713802), Nano- and Bio-device Key Project of CAS, 985 Project of Hunan University.

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摘要： A simplified n-ZnO/p-Si heterojunction has been prepared by growing n-type ZnO rods on p-type silicon wafer through the chemical vapour deposition method. The reflectance spectrum of the sample shows an independent absorption peak at 384 nm, which may be originated from the bound states at the junction. In the photoluminescence spectrum a new emission band is shown at 393 nm, besides the bandedge emission at 380 nm. The electroluminescence spectrum of the n-ZnO/p-Si heterojunction shows a stable yellow luminescence band centred at 560 nm，which can be attributed to the emission from trapped states. Another kind of discrete ZnO rod has also been prepared on such silicon wafer and is encapsulated with carbonated polystyrene for electroluminescence detection. This composite structure shows a weak ultraviolet electroluminescence band at 395 nm and a yellow electroluminescence band. These data prove that surface modification which blocks the transverse movement of carriers between neighbouring nanorods plays important roles in the ultraviolet emission of ZnO nanorods. These findings are vital for future display device design.

关键词: ZnO, photoluminescence, electroluminescence

Abstract: A simplified n-ZnO/p-Si heterojunction has been prepared by growing n-type ZnO rods on p-type silicon wafer through the chemical vapour deposition method. The reflectance spectrum of the sample shows an independent absorption peak at 384 nm, which may be originated from the bound states at the junction. In the photoluminescence spectrum a new emission band is shown at 393 nm, besides the bandedge emission at 380 nm. The electroluminescence spectrum of the n-ZnO/p-Si heterojunction shows a stable yellow luminescence band centred at 560 nm，which can be attributed to the emission from trapped states. Another kind of discrete ZnO rod has also been prepared on such silicon wafer and is encapsulated with carbonated polystyrene for electroluminescence detection. This composite structure shows a weak ultraviolet electroluminescence band at 395 nm and a yellow electroluminescence band. These data prove that surface modification which blocks the transverse movement of carriers between neighbouring nanorods plays important roles in the ultraviolet emission of ZnO nanorods. These findings are vital for future display device design.

Key words: ZnO, photoluminescence, electroluminescence

中图分类号:  (II-VI semiconductors)

  • 78.55.Et
68.55.-a (Thin film structure and morphology) 73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 78.60.Fi (Electroluminescence) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))