中国物理B ›› 2007, Vol. 16 ›› Issue (5): 1410-1416.doi: 10.1088/1009-1963/16/5/040

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Pseudo nanocrystal silicon induced luminescence enhancement in a-Si /SiO2 multilayers

韩培高, 马忠元, 夏正月, 陈德媛, 徐骏, 钱波, 陈三, 李伟, 黄信凡, 陈坤基, 冯端   

  1. National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
  • 收稿日期:2006-07-20 修回日期:2006-11-21 出版日期:2007-05-20 发布日期:2007-05-20
  • 基金资助:
    Project supported by the Natural Science Foundation of Jiangsu Province, China (Grant No BK 2004410), the National Natural Science Foundation of China (Grant Nos 60508009, 90301009, 60471021 and 60571008), and the State Key Program for Basic Research of C

Pseudo nanocrystal silicon induced luminescence enhancement in a-Si /SiO2 multilayers

Han Pei-Gao(韩培高), Ma Zhong-Yuan(马忠元)†, Xia Zheng-Yue(夏正月), Chen De-Yuan(陈德媛), Xu Jun (徐骏), Qian Bo(钱波), Chen San(陈三), Li Wei (李伟), Huang Xin-Fan(黄信凡), Chen Kun-Ji(陈坤基), and Feng Duan(冯端)   

  1. National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
  • Received:2006-07-20 Revised:2006-11-21 Online:2007-05-20 Published:2007-05-20
  • Supported by:
    Project supported by the Natural Science Foundation of Jiangsu Province, China (Grant No BK 2004410), the National Natural Science Foundation of China (Grant Nos 60508009, 90301009, 60471021 and 60571008), and the State Key Program for Basic Research of C

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摘要： Enhanced photoluminescence (PL) at room temperature from thermally annealed a-Si\jz{.2mm}{:}H/SiO2 multilayers is observed through the step-by-step thermal post-treatment. The correlation between the PL and the crystallization process is studied using temperature-dependent PL, Raman, cross section high-resolution transmission electron microscopy (X-HRTEM) and x-ray diffraction (XRD) techniques. An intensified PL band around 820nm is discovered from the sample annealed near the crystallization onset temperature, which is composed of two peaks centred at 773nm and 863nm, respectively. It is found that the PL band centred at 863nm is related to the pseudo nanocrystal (p-nc-Si) silicon, and the PL band centred at 773nm is attributed to Si = O bonds stabilized in the p-nc-Si surface.

关键词: nanometre Si, photoluminescence, Raman spectroscopy

Abstract: Enhanced photoluminescence (PL) at room temperature from thermally annealed a-Si:H/SiO2 multilayers is observed through the step-by-step thermal post-treatment. The correlation between the PL and the crystallization process is studied using temperature-dependent PL, Raman, cross section high-resolution transmission electron microscopy (X-HRTEM) and x-ray diffraction (XRD) techniques. An intensified PL band around 820nm is discovered from the sample annealed near the crystallization onset temperature, which is composed of two peaks centred at 773nm and 863nm, respectively. It is found that the PL band centred at 863nm is related to the pseudo nanocrystal (p-nc-Si) silicon, and the PL band centred at 773nm is attributed to Si = O bonds stabilized in the p-nc-Si surface.

Key words: nanometre Si, photoluminescence, Raman spectroscopy

中图分类号:  (Photoluminescence, properties and materials)

  • 78.55.-m
64.70.D- (Solid-liquid transitions) 68.37.Lp (Transmission electron microscopy (TEM)) 78.30.Hv (Other nonmetallic inorganics) 81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)