中国物理B ›› 2005, Vol. 14 ›› Issue (4): 834-837.doi: 10.1088/1009-1963/14/4/035

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Preparation of high-quality hydrogenated amorphous silicon film with a new microwave electron cyclotron resonance chemical vapour deposition system assisted with hot wire

朱秀红, 陈光华, 阴生毅, 荣延栋, 张文理, 胡跃辉   

  1. Department of Materials Science and Engineering, Beijing University of Technology, Beijing,100022, China
  • 收稿日期:2004-09-21 修回日期:2004-11-29 出版日期:2005-04-20 发布日期:2005-03-28
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant No G2000028201-1)

Preparation of high-quality hydrogenated amorphous silicon film with a new microwave electron cyclotron resonance chemical vapour deposition system assisted with hot wire

Zhu Xiu-Hong (朱秀红), Chen Guang-Hua (陈光华), Yin Sheng-Yi (阴生毅), Rong Yan-Dong (荣延栋), Zhang Wen-Li (张文理), Hu Yue-Hui (胡跃辉)   

  1. Department of Materials Science and Engineering, Beijing University of Technology, Beijing 100022, China
  • Received:2004-09-21 Revised:2004-11-29 Online:2005-04-20 Published:2005-03-28
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant No G2000028201-1)

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摘要： The preparation of high-quality hydrogenated amorphous silicon (a-Si:H) film with a new microwave electron cyclotron resonance-chemical vapour deposition (MWECR-CVD) system assisted with hot wire is presented. In this system the hot wire plays an important role in perfecting the microstructure as well as improving the stability and the optoelectronic properties of the a-Si:H film. The experimental results indicate that in the microstructure of the a-Si:H film, the concentration of dihydride is decreased and a trace of microcrystalline occurs, which is useful to improve its stability, and that in the optoelectronic properties of the a-Si:H film, the deposition rate reaches above 2.0nm/s and the photosensitivity increases up to 4.71$\times $105.

关键词: hydrogenated amorphous silicon (a-Si:H) films, hot wire microstructure, stability, opto-electronic property, deposition rate

Abstract: The preparation of high-quality hydrogenated amorphous silicon (a-Si:H) film with a new microwave electron cyclotron resonance-chemical vapour deposition (MWECR-CVD) system assisted with hot wire is presented. In this system the hot wire plays an important role in perfecting the microstructure as well as improving the stability and the optoelectronic properties of the a-Si:H film. The experimental results indicate that in the microstructure of the a-Si:H film, the concentration of dihydride is decreased and a trace of microcrystalline occurs, which is useful to improve its stability, and that in the optoelectronic properties of the a-Si:H film, the deposition rate reaches above 2.0nm/s and the photosensitivity increases up to 4.71$\times $105.

Key words: hydrogenated amorphous silicon (a-Si:H) films, hot wire microstructure, stability, opto-electronic property, deposition rate

中图分类号:  (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

  • 81.15.Gh
68.55.A- (Nucleation and growth) 78.20.Jq (Electro-optical effects) 78.66.Db (Elemental semiconductors and insulators)