中国物理B ›› 2004, Vol. 13 ›› Issue (8): 1370-1374.doi: 10.1088/1009-1963/13/8/034

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Fabrication of high growth rate solar-cell-quality μc-Si:H thin films by VHF-PECVD

张晓丹, 赵颖, 朱锋, 孙建, 魏长春, 侯国付, 耿新华, 熊绍珍   

  1. Institute of Optoelectronics, Nankai University, Tianjin 300071, China
  • 收稿日期:2003-12-16 修回日期:2004-04-16 出版日期:2004-06-21 发布日期:2005-06-22
  • 基金资助:
    Project supported by the State Key Development Programme for Basic Research of China (Grant Nos G2000028202, G2000028203) and by the Key Project of Education Bureau of Tianjin (Grant No 02167) and the National High Technology Development Programme for hig

Fabrication of high growth rate solar-cell-quality μc-Si:H thin films by VHF-PECVD

Zhang Xiao-Dan (张晓丹), Zhao Ying (赵颖), Zhu Feng (朱锋), Sun Jian (孙建), Wei Chang-Chun (魏长春), Hou Guo-Fu (侯国付), Geng Xin-Hua (耿新华), Xiong Shao-Zhen (熊绍珍)   

  1. Institute of Optoelectronics, Nankai University, Tianjin 300071, China
  • Received:2003-12-16 Revised:2004-04-16 Online:2004-06-21 Published:2005-06-22
  • Supported by:
    Project supported by the State Key Development Programme for Basic Research of China (Grant Nos G2000028202, G2000028203) and by the Key Project of Education Bureau of Tianjin (Grant No 02167) and the National High Technology Development Programme for hig

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摘要： Several series of Si:H films were fabricated by the very high frequency plasma enhanced chemical vapour deposition (VHF-PECVD) at different substrate temperatures (T_s) and silane concentration (SC=[SiH_4]/[SiH_4+H_2]%). The results of Raman spectroscopy showed structural evolution of the Si:H films with the variation of T_s and SC. The results of x-ray diffraction (XRD) measurements indicated that T_s also influences the crystal orientation of the Si:H films. The modulation effect of T_s on crystalline volume fraction (X_c) is more evident for the high SC, which shows different trend compared to low SC. In addition, the growth rate of the films also showed a regular change with the variation of SC and T_s. Different samples in the series showed a similar increase in dark conductivity and a decrease in photosensitivity with increasing T_s and decreasing SC. Device-quality microcrystalline silicon materials were deposited at a high growth rate, characterized by relatively low dark conductivity and relatively high photosensitivity in a certain crystalline range. The microcrystalline silicon solar cell with a conversion efficiency of 4.55% has been prepared by VHF-PECVD.

关键词: VHF-PECVD, device-quality microcrystalline silicon, Raman spectroscopy, XRD

Abstract: Several series of Si:H films were fabricated by the very high frequency plasma enhanced chemical vapour deposition (VHF-PECVD) at different substrate temperatures (Ts) and silane concentration (SC=[SiH$_4$]/[SiH$_4$+H$_2$]%). The results of Raman spectroscopy showed structural evolution of the Si:H films with the variation of Ts and SC. The results of x-ray diffraction (XRD) measurements indicated that Ts also influences the crystal orientation of the Si:H films. The modulation effect of Ts on crystalline volume fraction (Xc) is more evident for the high SC, which shows different trend compared to low SC. In addition, the growth rate of the films also showed a regular change with the variation of SC and Ts. Different samples in the series showed a similar increase in dark conductivity and a decrease in photosensitivity with increasing Ts and decreasing SC. Device-quality microcrystalline silicon materials were deposited at a high growth rate, characterized by relatively low dark conductivity and relatively high photosensitivity in a certain crystalline range. The microcrystalline silicon solar cell with a conversion efficiency of 4.55% has been prepared by VHF-PECVD.

Key words: VHF-PECVD, device-quality microcrystalline silicon, Raman spectroscopy, XRD

中图分类号:  (Multilayers)

  • 68.65.Ac
78.30.Hv (Other nonmetallic inorganics) 84.60.Jt (Photoelectric conversion) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 52.77.Dq (Plasma-based ion implantation and deposition) 72.40.+w (Photoconduction and photovoltaic effects) 73.50.Pz (Photoconduction and photovoltaic effects)