中国物理B ›› 2004, Vol. 13 ›› Issue (5): 731-736.doi: 10.1088/1009-1963/13/5/027

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Upgrading design of the 3B1A beamline for x-ray nanometre lithography of microelectronic devices at BSRF

伊福廷1, 彭良强1, 张菊芳1, 韩勇1, 叶甜春2, 陈大鹏2   

  1. (1)Institute of High Energy Physics, China Academy of Science, Beijing 100039, China; (2)Institute of Micro Electronics, China Academy of Science, Beijing 100029, China
  • 收稿日期:2003-09-19 修回日期:2003-12-21 出版日期:2004-05-06 发布日期:2005-07-06
  • 基金资助:
    Project partially supported by the Chinese 863 Plan (Contract No 2002AA404150).

Upgrading design of the 3B1A beamline for x-ray nanometre lithography of microelectronic devices at BSRF

Yi Fu-Ting (伊福廷)a, Ye Tian-Chun (叶甜春)b, Peng Liang-Qiang (彭良强)a, Chen Da-Peng (陈大鹏)b, Zhang Ju-Fang (张菊芳)a, Han Yong (韩勇)a   

  1. a Institute of High Energy Physics, China Academy of Science, Beijing 100039, China; b Institute of Micro Electronics, China Academy of Science, Beijing 100029, China
  • Received:2003-09-19 Revised:2003-12-21 Online:2004-05-06 Published:2005-07-06
  • Supported by:
    Project partially supported by the Chinese 863 Plan (Contract No 2002AA404150).

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摘要： Beijing Synchrotron Radiation Facility is a partly dedicated synchrotron radiation source operated in either parasitic or dedicated mode. The 3B1A beamline, extracted from a bending magnet, was originally designed as a soft x-ray beamline for submicro x-ray lithography with critical lateral size just below 1μm in 1988 and no change has been made since it was built. But later the required resolution of x-ray lithography has changed from sub-micrometre to the nanometre in the critical lateral size. This beamline can longer more meet the requirement for x-ray nano lithography and has to be modified to fit the purpose. To upgrade the design of the 3B1A beamline for x-ray nano lithography, a mirror is used to reflect and scan the x-ray beam for the nano lithography station, but the mirror's grazing angle is changed to 27.9mrad in the vertical direction, and the convex curve needs to be modified to fit the change; the tiny change of mirror scanning angle is firstly considered to improve the uniformity of the x-ray spot on the wafer by controlling the convex curve.

关键词: synchrotron radiation, x-ray, x-ray lithography, synchrotron radiation beamline

Abstract: Beijing Synchrotron Radiation Facility is a partly dedicated synchrotron radiation source operated in either parasitic or dedicated mode. The 3B1A beamline, extracted from a bending magnet, was originally designed as a soft x-ray beamline for submicro x-ray lithography with critical lateral size just below 1μm in 1988 and no change has been made since it was built. But later the required resolution of x-ray lithography has changed from sub-micrometre to the nanometre in the critical lateral size. This beamline can longer more meet the requirement for x-ray nano lithography and has to be modified to fit the purpose. To upgrade the design of the 3B1A beamline for x-ray nano lithography, a mirror is used to reflect and scan the x-ray beam for the nano lithography station, but the mirror's grazing angle is changed to 27.9mrad in the vertical direction, and the convex curve needs to be modified to fit the change; the tiny change of mirror scanning angle is firstly considered to improve the uniformity of the x-ray spot on the wafer by controlling the convex curve.

Key words: synchrotron radiation, x-ray, x-ray lithography, synchrotron radiation beamline

中图分类号:  (Lithography, masks and pattern transfer)

  • 85.40.Hp
07.85.Qe (Synchrotron radiation instrumentation) 07.85.Fv (X- and γ-ray sources, mirrors, gratings, and detectors)