中国物理B ›› 2001, Vol. 10 ›› Issue (13): 140-143.

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CLUSTER NUCLEATION LIMITED BY GROWTH PATTERN COVERAGE IN THIN FILM PREPARATION FROM VAPOR

张琦锋1, 许北雪1, 刘惟敏1, 赵兴钰1, 吴锦雷1, 薛增泉1, 邵庆益2, 方容川3, 朱开贵3   

  1. (1)Department of Electronics, Peking University, Beijing 100871, China; (2)Department of Electronics, Peking University, Beijing 100871, China; Structure Research Laboratory and Department of Physics, University of Science and Technology of China, Hefei 230026, China; (3)Structure Research Laboratory and Department of Physics, University of Science and Technology of China, Hefei 230026, China
  • 收稿日期:2001-03-14 出版日期:2001-12-25 发布日期:2005-07-07
  • 基金资助:
    Project supported by the National Advanced Material Committee of China (Grant No. 863-715-002-003) and the National Natural Science Foundation of China (Grant No. 69890221).

CLUSTER NUCLEATION LIMITED BY GROWTH PATTERN COVERAGE IN THIN FILM PREPARATION FROM VAPOR

Shao Qing-yi (邵庆益)ab, Zhang Qi-feng (张琦锋)a, Fang Rong-chuan (方容川)b, Zhu Kai-gui (朱开贵)b, Xu Bei-xue (许北雪)a, Liu Wei-min (刘惟敏)a, Zhao Xing-yu (赵兴钰)a, Wu Jin-lei (吴锦雷)a, Xue Zeng-quan (薛增泉)a   

  1. a Department of Electronics, Peking University, Beijing 100871, China; b Structure Research Laboratory and Department of Physics, University of Science and Technology of China, Hefei 230026, China
  • Received:2001-03-14 Online:2001-12-25 Published:2005-07-07
  • Supported by:
    Project supported by the National Advanced Material Committee of China (Grant No. 863-715-002-003) and the National Natural Science Foundation of China (Grant No. 69890221).

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摘要： In the early stage of thin film preparation from vapor, growth patterns consisting of stable clusters will gradually cover almost the entire substrate surface. During this process, the density of single atoms is zero on growth patterns and the nucleation of clusters will proceed in the substrate parts uncovered by these patterns. The influence of growth pattern coverage on the nucleation of thin films has not been considered wholly in the classical theory of thin films. We will systematically study the influence of growth pattern coverage and give some correction formulas for the widely used classical theory of thin films. It was found that the classical nucleation rate is proportional to the square of the uncovered area. The corrected formulas are of particular importance in the dominant coverage case.

Abstract: In the early stage of thin film preparation from vapor, growth patterns consisting of stable clusters will gradually cover almost the entire substrate surface. During this process, the density of single atoms is zero on growth patterns and the nucleation of clusters will proceed in the substrate parts uncovered by these patterns. The influence of growth pattern coverage on the nucleation of thin films has not been considered wholly in the classical theory of thin films. We will systematically study the influence of growth pattern coverage and give some correction formulas for the widely used classical theory of thin films. It was found that the classical nucleation rate is proportional to the square of the uncovered area. The corrected formulas are of particular importance in the dominant coverage case.

Key words: thin film growth, nucleation, clusters

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  • 8115