中国物理B ›› 2010, Vol. 19 ›› Issue (9): 97805-097805.doi: 10.1088/1674-1056/19/9/097805

• • 上一篇    下一篇

Electroluminescence of double-doped diamond thin films

章诗, 王小平, 王丽军, 朱玉传, 梅翠玉, 刘欣欣, 李怀辉, 顾应展   

  1. College of Science, University of Shanghai for Science and Technology, Shanghai 200093, China
  • 收稿日期:2010-01-14 修回日期:2010-02-09 出版日期:2010-09-15 发布日期:2010-09-15
  • 基金资助:
    Project supported by the Shanghai Education Committee of China (Grant No. 07ZZ95) and the Shanghai Human Resources and Social Security Bureau (Grant No. 2009023).

Electroluminescence of double-doped diamond thin films

Zhang Shi(章诗), Wang Xiao-Ping(王小平)†, Wang Li-Jun(王丽军), Zhu Yu-Zhuan(朱玉传), Mei Cui-Yu(梅翠玉), Liu Xin-Xin(刘欣欣), Li Huai-Hui(李怀辉), and Gu Ying-Zhan(顾应展)   

  1. College of Science, University of Shanghai for Science and Technology, Shanghai 200093, China
  • Received:2010-01-14 Revised:2010-02-09 Online:2010-09-15 Published:2010-09-15
  • Supported by:
    Project supported by the Shanghai Education Committee of China (Grant No. 07ZZ95) and the Shanghai Human Resources and Social Security Bureau (Grant No. 2009023).

PDF (PC)

784

赞

摘要： A new electroluminescence device is fabricated by microwave plasma chemical vapour deposition system and electron beam vapour deposition system. It is comprised of highly doped silicon/diamond/boron/nitrogen-doped diamond/indium tin oxide thin films. Effects of process parameters on morphologies and structures of the thin films are detected and analysed by scanning electron microscopy, Raman spectrometer and x-ray photoelectron spectrometer. A direct-current (DC) power supply is used to drive the electroluminescence device. The blue light emission with a luminance of 1.2 cd·m- 2 is observed from this double-doped diamond thin film electroluminescence device at an applied voltage of 105 V.

Abstract: A new electroluminescence device is fabricated by microwave plasma chemical vapour deposition system and electron beam vapour deposition system. It is comprised of highly doped silicon/diamond/boron/nitrogen-doped diamond/indium tin oxide thin films. Effects of process parameters on morphologies and structures of the thin films are detected and analysed by scanning electron microscopy, Raman spectrometer and x-ray photoelectron spectrometer. A direct-current (DC) power supply is used to drive the electroluminescence device. The blue light emission with a luminance of 1.2 cd·m- 2 is observed from this double-doped diamond thin film electroluminescence device at an applied voltage of 105 V.

Key words: electroluminescence, double-doped diamond thin film, microwave plasma chemical vapour deposition, electron beam vapour deposition

中图分类号: 

  • 7860F