中国物理B ›› 1995, Vol. 4 ›› Issue (3): 213-218.doi: 10.1088/1004-423X/4/3/007
肖治刚1, 柯俊1, 栾洪发2, 张隽3
LUAN HONG-FA (栾洪发)a, ZHANG JUN (张隽)b, XIAO ZHI-GANG (肖治刚)c, KE JUN (柯俊)c
摘要: This paper ia dealing with the interaction between oxygen precipitates and structural defects in CZ Si crystals. Different lattice defects: dislocation loops, rod-like defects and stacking faults have been observed as a consequence of oxygen precipitation. In turn, these defects also promote the nucleation and growth of the oxygen precipitates. It is shown that the dislocation dipole is more efficient than single dislocation in enhancing the oxygen precipitate formation.
中图分类号: (Phase equilibria)