Thermal stability of HfO2/Si (001) films prepared by electron beam evaporation in ultrahigh vacuum using atomic oxygen

doi:10.1088/1674-1056/19/12/128204

中国物理B ›› 2010, Vol. 19 ›› Issue (12): 128204-128204.doi: 10.1088/1674-1056/19/12/128204

Thermal stability of HfO₂/Si (001) films prepared by electron beam evaporation in ultrahigh vacuum using atomic oxygen

阎志军¹, 徐闰², 贡伟明², 王林军², 夏义本²

(1)Department of Applied Physics, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China; (2)School of Materials Science & Engineering, Shanghai University, Shanghai 200072, China

收稿日期:2010-04-11 修回日期:2010-07-06 出版日期:2010-12-15 发布日期:2010-12-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 60877017), the Shanghai Leading Academic Disciplines Foundation (Grant No. S30107), and the Innovation Program of Shanghai Municipal Education Commission (Grant No. 08YZ04).

Thermal stability of HfO₂/Si (001) films prepared by electron beam evaporation in ultrahigh vacuum using atomic oxygen

Xu Run(徐闰)^a)†, Gong Wei-Ming(贡伟明)^a), Yan Zhi-Jun(阎志军)^b), Wang Lin-Jun(王林军)^a), and Xia Yi-Ben(夏义本)^a)

^a School of Materials Science & Engineering, Shanghai University, Shanghai 200072, China; ^b Department of Applied Physics, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China

Received:2010-04-11 Revised:2010-07-06 Online:2010-12-15 Published:2010-12-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 60877017), the Shanghai Leading Academic Disciplines Foundation (Grant No. S30107), and the Innovation Program of Shanghai Municipal Education Commission (Grant No. 08YZ04).

摘要/Abstract

摘要： HfO₂ films on silicon substrates have been prepared by electron beam evaporation in ultrahigh vacuum using atomic oxygen. Synchrotron radiation photon–electron spectroscopy was used to investigate the thermal stability of HfO₂ films under an ultrahigh vacuum environment. At the temperature of 750 oC, HfO₂ films begin to decompose. After being further annealed at 850 oC for 3 min, HfO₂ films decomposes completely, partially to form Hf-silicide and partially to form gaseous HfO. Two chemical reactions are responsible for this decomposition process. A small amount of Hf-silicide, which is formed at the very beginning of growth, may result in the films grown subsequently to be loosened, and thereby leads to a relatively low decomposition temperature.

Abstract: HfO₂ films on silicon substrates have been prepared by electron beam evaporation in ultrahigh vacuum using atomic oxygen. Synchrotron radiation photon–electron spectroscopy was used to investigate the thermal stability of HfO₂ films under an ultrahigh vacuum environment. At the temperature of 750 $^\circ$C, HfO₂ films begin to decompose. After being further annealed at 850 $^\circ$C for 3 min, HfO₂ films decomposes completely, partially to form Hf-silicide and partially to form gaseous HfO. Two chemical reactions are responsible for this decomposition process. A small amount of Hf-silicide, which is formed at the very beginning of growth, may result in the films grown subsequently to be loosened, and thereby leads to a relatively low decomposition temperature.

Key words: surface and interface, high-k oxides, photon–electron spectroscopy

中图分类号: (Phase equilibria)

64.75.-g

68.55.A- (Nucleation and growth) 81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)

徐闰, 贡伟明, 阎志军, 王林军, 夏义本. Thermal stability of HfO₂/Si (001) films prepared by electron beam evaporation in ultrahigh vacuum using atomic oxygen[J]. 中国物理B, 2010, 19(12): 128204-128204.

Xu Run(徐闰), Gong Wei-Ming(贡伟明), Yan Zhi-Jun(阎志军), Wang Lin-Jun(王林军), and Xia Yi-Ben(夏义本). Thermal stability of HfO₂/Si (001) films prepared by electron beam evaporation in ultrahigh vacuum using atomic oxygen[J]. Chin. Phys. B, 2010, 19(12): 128204-128204.

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Thermal stability of HfO₂/Si (001) films prepared by electron beam evaporation in ultrahigh vacuum using atomic oxygen

Thermal stability of HfO₂/Si (001) films prepared by electron beam evaporation in ultrahigh vacuum using atomic oxygen

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