中国物理B ›› 1992, Vol. 1 ›› Issue (1): 45-50.doi: 10.1088/1004-423X/1/1/005
范卫军1, 夏建白1, 顾宗权2, 李国华3
FAN WEI-JUN (范卫军)ab, GU ZONG-QUAN (夏建白), XIA JIAN-BAI (顾宗权)ab, LI GUO-HUA (李国华)b
摘要: With the local density approximation, the band structares of the short-period (GaAs)1(AlAs)1 and (GaAs)2(AlAs)1 superlattices are calculated by using the first-principle self-consistent pseudopotential method. The results show that the (GaAs)1(AlAs)1 superlattice is an indirect semiconductor, and the lowest conduction band state is at point R in the Brillouin zone; the (GaAs)2(AlAs)1 superlattice is a direct semiconductor and the lowest conduction band state is at point Γ. The squared matrix elements of transition are calculated. The pressure coefficients of energy gaps of the (GaAs)1(AlAs)1 and (GaAs)2(AlAs)1 superlattices are calculated and compared with those obtained by hydrostatic pressure experiments.
中图分类号: (Superlattices)