Unique high-energy excitons in two-dimensional transition metal dichalcogenides

doi:10.1088/1674-1056/ade074

中国物理B ›› 2025, Vol. 34 ›› Issue (9): 97102-097102.doi: 10.1088/1674-1056/ade074

所属专题： TOPICAL REVIEW — Exciton physics: Fundamentals, materials and devices

Unique high-energy excitons in two-dimensional transition metal dichalcogenides

Yongsheng Gao(高永盛), Yuanzheng Li(李远征)†, Weizhen Liu(刘为振), Chuxin Yan(闫楚欣), Qingbin Wang(王庆彬), Wei Xin(辛巍), Haiyang Xu(徐海阳)‡, and Yichun Liu(刘益春)§

State Key Laboratory of Integrated Optoelectronics, and Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China

收稿日期:2025-04-26 修回日期:2025-06-01 接受日期:2025-06-04 出版日期:2025-08-21 发布日期:2025-08-28
通讯作者: Yuanzheng Li, Haiyang Xu, Yichun Liu E-mail:liyz264@nenu.edu.cn;hyxu@nenu.edu.cn;ycliu@nenu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation Fund for Distinguished Young Scholars (Grant No. 52025022), the National Natural Science Foundation of China (Grant Nos. 62574038, 12474421, 62275045, and 12074060), the National Key R&D Program of China (Grant No. 2023YFB3610200), and the Fund from Jilin Province (Grant Nos. JJKH20241413KJ and 20240601049RC).

Unique high-energy excitons in two-dimensional transition metal dichalcogenides

Yongsheng Gao(高永盛), Yuanzheng Li(李远征)†, Weizhen Liu(刘为振), Chuxin Yan(闫楚欣), Qingbin Wang(王庆彬), Wei Xin(辛巍), Haiyang Xu(徐海阳)‡, and Yichun Liu(刘益春)§

State Key Laboratory of Integrated Optoelectronics, and Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China

Received:2025-04-26 Revised:2025-06-01 Accepted:2025-06-04 Online:2025-08-21 Published:2025-08-28
Contact: Yuanzheng Li, Haiyang Xu, Yichun Liu E-mail:liyz264@nenu.edu.cn;hyxu@nenu.edu.cn;ycliu@nenu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation Fund for Distinguished Young Scholars (Grant No. 52025022), the National Natural Science Foundation of China (Grant Nos. 62574038, 12474421, 62275045, and 12074060), the National Key R&D Program of China (Grant No. 2023YFB3610200), and the Fund from Jilin Province (Grant Nos. JJKH20241413KJ and 20240601049RC).

摘要/Abstract

摘要： Two-dimensional (2D) transition metal dichalcogenides (TMDs), endowed with exceptional light-matter interaction strength, have become a pivotal platform in advanced optoelectronics, enabling atomically precise control of excitonic phenomena and offering transformative potential for engineering next-generation optoelectronic devices. In contrast to the narrowband absorption characteristics of conventional band-edge excitons, which are limited by the bandgap energy, high-energy excitons not only demonstrate broad momentum matching capability in the ultraviolet regime due to band nesting effects, but also exhibit distinct absorption peak signatures owing to robust excitonic stabilization under 2D confinement. These unique photophysical properties have established such systems as a prominent research frontier in contemporary exciton physics. This review primarily outlines the distinctive physical characteristics of high-energy excitons in TMDs from the perspectives of band structure, excitonic characteristics, and optical properties. Subsequently, we systematically delineate cutting-edge developments in TMD-based photonic devices exploiting high-energy excitonic band-nesting phenomena, with dedicated emphasis on the strategic engineering of nanoscale heterostructures for tailored optoelectronic functionality. Finally, the discussion concludes with an examination of the challenges associated with the design of high-energy exciton devices and their potential future applications.

关键词: two-dimensional materials, transition metal dichalcogenides, high-energy excitons, band nesting effect, optoelectronic applications

Abstract: Two-dimensional (2D) transition metal dichalcogenides (TMDs), endowed with exceptional light-matter interaction strength, have become a pivotal platform in advanced optoelectronics, enabling atomically precise control of excitonic phenomena and offering transformative potential for engineering next-generation optoelectronic devices. In contrast to the narrowband absorption characteristics of conventional band-edge excitons, which are limited by the bandgap energy, high-energy excitons not only demonstrate broad momentum matching capability in the ultraviolet regime due to band nesting effects, but also exhibit distinct absorption peak signatures owing to robust excitonic stabilization under 2D confinement. These unique photophysical properties have established such systems as a prominent research frontier in contemporary exciton physics. This review primarily outlines the distinctive physical characteristics of high-energy excitons in TMDs from the perspectives of band structure, excitonic characteristics, and optical properties. Subsequently, we systematically delineate cutting-edge developments in TMD-based photonic devices exploiting high-energy excitonic band-nesting phenomena, with dedicated emphasis on the strategic engineering of nanoscale heterostructures for tailored optoelectronic functionality. Finally, the discussion concludes with an examination of the challenges associated with the design of high-energy exciton devices and their potential future applications.

Key words: two-dimensional materials, transition metal dichalcogenides, high-energy excitons, band nesting effect, optoelectronic applications

中图分类号: (Excitons and related phenomena)

71.35.-y

73.63.-b (Electronic transport in nanoscale materials and structures) 71.35.Cc (Intrinsic properties of excitons; optical absorption spectra) 71.35.Pq (Charged excitons (trions))

Yongsheng Gao(高永盛), Yuanzheng Li(李远征), Weizhen Liu(刘为振), Chuxin Yan(闫楚欣), Qingbin Wang(王庆彬), Wei Xin(辛巍), Haiyang Xu(徐海阳), and Yichun Liu(刘益春). Unique high-energy excitons in two-dimensional transition metal dichalcogenides[J]. 中国物理B, 2025, 34(9): 97102-097102.

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Unique high-energy excitons in two-dimensional transition metal dichalcogenides

Unique high-energy excitons in two-dimensional transition metal dichalcogenides

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