中国物理B ›› 2025, Vol. 34 ›› Issue (9): 97404-097404.doi: 10.1088/1674-1056/adda09

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A semiconductor-like in-plane junction between overdoped and optimally doped La2-xCexCuO4

Mohsin Rafique(莫辛 拉菲克)1, Rui Wu(吴蕊)1,†, Zefeng Lin(林泽丰)2,3, Kui Jin(金魁)2,3, Qi-Kun Xue(薛其坤)1,4,5,6, and Ding Zhang(张定)1,4,5,7,8   

  1. 1 Beijing Academy of Quantum Information Sciences, Beijing 100193, China;
    2 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    3 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;
    4 State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China;
    5 Frontier Science Center for Quantum Information, Beijing 100084, China;
    6 Southern University of Science and Technology, Shenzhen 518055, China;
    7 RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198, Japan;
    8 Hefei National Laboratory, Hefei 230028, China
  • 收稿日期:2025-03-11 修回日期:2025-04-30 接受日期:2025-05-19 出版日期:2025-08-21 发布日期:2025-09-03
  • 通讯作者: Rui Wu E-mail:wu_rui@baqis.ac.cn
  • 基金资助:
    electron-doped cuprate superconductor|ionic liquid gating|junction|transport measurement

A semiconductor-like in-plane junction between overdoped and optimally doped La2-xCexCuO4

Mohsin Rafique(莫辛 拉菲克)1, Rui Wu(吴蕊)1,†, Zefeng Lin(林泽丰)2,3, Kui Jin(金魁)2,3, Qi-Kun Xue(薛其坤)1,4,5,6, and Ding Zhang(张定)1,4,5,7,8   

  1. 1 Beijing Academy of Quantum Information Sciences, Beijing 100193, China;
    2 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    3 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;
    4 State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China;
    5 Frontier Science Center for Quantum Information, Beijing 100084, China;
    6 Southern University of Science and Technology, Shenzhen 518055, China;
    7 RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198, Japan;
    8 Hefei National Laboratory, Hefei 230028, China
  • Received:2025-03-11 Revised:2025-04-30 Accepted:2025-05-19 Online:2025-08-21 Published:2025-09-03
  • Contact: Rui Wu E-mail:wu_rui@baqis.ac.cn
  • Supported by:
    The authors thank valuable discussion with Shusen Ye and Yang Feng. Project supported by the National Key Research and Development Program of China (Grant No. 2022YFA1403100), the National Natural Science Foundation of China (Grant Nos. 52388201, 12361141820, and 12274249), and the Innovation Program for Quantum Science and Technology (Grant No. 2021ZD0302400).

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摘要： The electron-doped cuprate superconductor exhibits a unique electronic structure, where both electron and hole Fermi surface (FS) pockets coexist in the optimally doped (OP) region, while in the overdoped (OD) region there exists only a large hole FS pocket. It is therefore an intriguing question whether or not a p-n junction arises if the OD electron-doped cuprate interfaces with the OP compound. Here, we construct such an in-plane junction by selectively modulating the doping levels in thin films of ${\mathrm{La}}_{2-x}{\mathrm{Ce}}_{x}\mathrm{Cu}\mathrm{O}_{\mathrm{4}}$ (LCCO) — a typical electron-doped cuprate. We find that the junction exhibits non-linear, asymmetric $I$-$V$ characteristics, which are consistent with those of a p-n semiconductor junction, across a wide temperature range from 250 K to 10 K, regardless of the Hall coefficient sign change or the superconducting transition. We attribute these features to a potential barrier formed at the junction, which is set by the band bending in both OD and OP LCCO.

关键词: electron-doped cuprate superconductor, ionic liquid gating, junction, transport measurement

Abstract: The electron-doped cuprate superconductor exhibits a unique electronic structure, where both electron and hole Fermi surface (FS) pockets coexist in the optimally doped (OP) region, while in the overdoped (OD) region there exists only a large hole FS pocket. It is therefore an intriguing question whether or not a p-n junction arises if the OD electron-doped cuprate interfaces with the OP compound. Here, we construct such an in-plane junction by selectively modulating the doping levels in thin films of ${\mathrm{La}}_{2-x}{\mathrm{Ce}}_{x}\mathrm{Cu}\mathrm{O}_{\mathrm{4}}$ (LCCO) — a typical electron-doped cuprate. We find that the junction exhibits non-linear, asymmetric $I$-$V$ characteristics, which are consistent with those of a p-n semiconductor junction, across a wide temperature range from 250 K to 10 K, regardless of the Hall coefficient sign change or the superconducting transition. We attribute these features to a potential barrier formed at the junction, which is set by the band bending in both OD and OP LCCO.

Key words: electron-doped cuprate superconductor, ionic liquid gating, junction, transport measurement

中图分类号:  (Transport properties)

  • 74.25.F-
74.72.Ek (Electron-doped) 73.40.-c (Electronic transport in interface structures)