中国物理B ›› 2024, Vol. 33 ›› Issue (5): 57101-057101.doi: 10.1088/1674-1056/ad322c

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Investigation of helicity-dependent photocurrent of surface states in (Bi0.7Sb0.3)2Te3 nanoplate

Qin Yu(喻钦)1, Jinling Yu(俞金玲)1,2,†, Yonghai Chen(陈涌海)3, Yunfeng Lai(赖云锋)1, Shuying Cheng(程树英)1,4, and Ke He(何珂)5   

  1. 1 School of Advanced Manufacturing, Fuzhou University, Quanzhou 362251, China;
    2 Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China;
    3 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    4 Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou University, Changzhou 213164, China;
    5 Department of Physics, State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
  • 收稿日期:2024-01-07 修回日期:2024-02-17 接受日期:2024-03-11 出版日期:2024-05-20 发布日期:2024-05-20
  • 通讯作者: Jinling Yu E-mail:jlyu@semi.ac.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 62074036, 61674038, and 11574302), the Foreign Cooperation Project of Fujian Province, China (Grant No. 2023I0005), the Open Research Fund Program of the State Key Laboratory of LowDimensional Quantum Physics (Grant No. KF202108), the National Key Research and Development Program of China (Grant No. 2016YFB0402303), and the Foundation of Fujian Provincial Department of Industry and Information Technology of China (Grant No. 82318075).

Investigation of helicity-dependent photocurrent of surface states in (Bi0.7Sb0.3)2Te3 nanoplate

Qin Yu(喻钦)1, Jinling Yu(俞金玲)1,2,†, Yonghai Chen(陈涌海)3, Yunfeng Lai(赖云锋)1, Shuying Cheng(程树英)1,4, and Ke He(何珂)5   

  1. 1 School of Advanced Manufacturing, Fuzhou University, Quanzhou 362251, China;
    2 Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China;
    3 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    4 Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou University, Changzhou 213164, China;
    5 Department of Physics, State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
  • Received:2024-01-07 Revised:2024-02-17 Accepted:2024-03-11 Online:2024-05-20 Published:2024-05-20
  • Contact: Jinling Yu E-mail:jlyu@semi.ac.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 62074036, 61674038, and 11574302), the Foreign Cooperation Project of Fujian Province, China (Grant No. 2023I0005), the Open Research Fund Program of the State Key Laboratory of LowDimensional Quantum Physics (Grant No. KF202108), the National Key Research and Development Program of China (Grant No. 2016YFB0402303), and the Foundation of Fujian Provincial Department of Industry and Information Technology of China (Grant No. 82318075).

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摘要： Helicity-dependent photocurrent (HDPC) of the surface states in a high-quality topological insulator (Bi$_{0.7}$Sb$_{0.3}$)$_2$Te$_3$ nanoplate grown by chemical vapor deposition (CVD) is investigated. By investigating the angle-dependent HDPC, it is found that the HDPC is mainly contributed by the circular photogalvanic effect (CPGE) current when the incident plane is perpendicular to the connection of the two contacts, whereas the circular photon drag effect (CPDE) dominates the HDPC when the incident plane is parallel to the connection of the two contacts. In addition, the CPGE of the (Bi$_{0.7}$Sb$_{0.3}$)$_2$Te$_3$ nanoplate is regulated by temperature, light power, excitation wavelength, the source-drain and ionic liquid top-gate voltages, and the regulation mechanisms are discussed. It is demonstrated that (Bi$_{0.7}$Sb$_{0.3}$)$_2$Te$_3$ nanoplates may provide a good platform for novel opto-spintronics devices.

关键词: (Bi$_{0.7}$Sb$_{0.3}$)$_{2}$Te$_{3}$ nanoplate, helicity-dependent photocurrent, circular photogalvanic effect, ionic liquid gating

Abstract: Helicity-dependent photocurrent (HDPC) of the surface states in a high-quality topological insulator (Bi$_{0.7}$Sb$_{0.3}$)$_2$Te$_3$ nanoplate grown by chemical vapor deposition (CVD) is investigated. By investigating the angle-dependent HDPC, it is found that the HDPC is mainly contributed by the circular photogalvanic effect (CPGE) current when the incident plane is perpendicular to the connection of the two contacts, whereas the circular photon drag effect (CPDE) dominates the HDPC when the incident plane is parallel to the connection of the two contacts. In addition, the CPGE of the (Bi$_{0.7}$Sb$_{0.3}$)$_2$Te$_3$ nanoplate is regulated by temperature, light power, excitation wavelength, the source-drain and ionic liquid top-gate voltages, and the regulation mechanisms are discussed. It is demonstrated that (Bi$_{0.7}$Sb$_{0.3}$)$_2$Te$_3$ nanoplates may provide a good platform for novel opto-spintronics devices.

Key words: (Bi$_{0.7}$Sb$_{0.3}$)$_{2}$Te$_{3}$ nanoplate, helicity-dependent photocurrent, circular photogalvanic effect, ionic liquid gating

中图分类号:  (Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect)

  • 71.70.Ej
72.25.Fe (Optical creation of spin polarized carriers) 75.70.Tj (Spin-orbit effects) 75.76.+j (Spin transport effects)