中国物理B ›› 2025, Vol. 34 ›› Issue (10): 107501-107501.doi: 10.1088/1674-1056/add909

所属专题: SPECIAL TOPIC — Advanced magnonics

• • 上一篇    下一篇

Recent progress on electron- and magnon-mediated torques

Jia-Min Lai(来嘉敏)1,2,†, Bingyue Bian(边冰玥)1,2,†, Zhonghai Yu(于忠海)1,2,†, Kaiwei Guo(郭凯卫)1,2, Yajing Zhang(张雅静)1,2, Pengnan Zhao(赵鹏楠)1,2, Xiaoqian Zhang(张霄倩)1,2, Chunyang Tang(汤春阳)1,2, Jiasen Cao(曹家森)1,2, Zhiyong Quan(全志勇)1,2, Fei Wang(王飞)1,2,‡, and Xiaohong Xu(许小红)1,2,§   

  1. 1 School of Materials Science and Engineering, Key Laboratory of Magnetic Molecules and Magnetic Information Materials, Ministry of Education, Shanxi Normal University, Taiyuan 030031, China;
    2 Research Institute of Materials Science, Shanxi Key Laboratory of Advanced Magnetic Materials and Devices, Shanxi Normal University, Taiyuan 030031, China
  • 收稿日期:2025-03-31 修回日期:2025-05-07 接受日期:2025-05-15 发布日期:2025-10-20
  • 通讯作者: Fei Wang, Xiaohong Xu E-mail:feiwang.imr@gmail.com;xuxh@sxnu.edu.cn
  • 基金资助:
    This work was supported by the National Natural Science Foundation of China (Grant Nos. U24A6002, 12174237 (X. X.), 52471253 (F. W.), 12404091 (J. L.), 52171183 (Z. Q.)). X. X. acknowledges the support from the National Key Research and Development Program of China (Grant No. 2022YFB3505301). F. W. acknowledges the support from the Fund Program for the Scientific Activities of Selected Returned Overseas Professionals in Shanxi Province (Grant No. 20240019) and Central Government’s Special Fund for Local Science and Technology Development (Grant No. YDZJSX2024D058). J. L. acknowledges the support from the Basic Research Plan of Shanxi Province (Grant No. 202403021212016). Z. Y. acknowledges the support from the Fundamental Research Program of Shanxi Province (Grant No. 202403021222252) and the Higher Education Science and Technology Innovation Plan Project of Shanxi (Grant No. 2024L146).

Recent progress on electron- and magnon-mediated torques

Jia-Min Lai(来嘉敏)1,2,†, Bingyue Bian(边冰玥)1,2,†, Zhonghai Yu(于忠海)1,2,†, Kaiwei Guo(郭凯卫)1,2, Yajing Zhang(张雅静)1,2, Pengnan Zhao(赵鹏楠)1,2, Xiaoqian Zhang(张霄倩)1,2, Chunyang Tang(汤春阳)1,2, Jiasen Cao(曹家森)1,2, Zhiyong Quan(全志勇)1,2, Fei Wang(王飞)1,2,‡, and Xiaohong Xu(许小红)1,2,§   

  1. 1 School of Materials Science and Engineering, Key Laboratory of Magnetic Molecules and Magnetic Information Materials, Ministry of Education, Shanxi Normal University, Taiyuan 030031, China;
    2 Research Institute of Materials Science, Shanxi Key Laboratory of Advanced Magnetic Materials and Devices, Shanxi Normal University, Taiyuan 030031, China
  • Received:2025-03-31 Revised:2025-05-07 Accepted:2025-05-15 Published:2025-10-20
  • Contact: Fei Wang, Xiaohong Xu E-mail:feiwang.imr@gmail.com;xuxh@sxnu.edu.cn
  • Supported by:
    This work was supported by the National Natural Science Foundation of China (Grant Nos. U24A6002, 12174237 (X. X.), 52471253 (F. W.), 12404091 (J. L.), 52171183 (Z. Q.)). X. X. acknowledges the support from the National Key Research and Development Program of China (Grant No. 2022YFB3505301). F. W. acknowledges the support from the Fund Program for the Scientific Activities of Selected Returned Overseas Professionals in Shanxi Province (Grant No. 20240019) and Central Government’s Special Fund for Local Science and Technology Development (Grant No. YDZJSX2024D058). J. L. acknowledges the support from the Basic Research Plan of Shanxi Province (Grant No. 202403021212016). Z. Y. acknowledges the support from the Fundamental Research Program of Shanxi Province (Grant No. 202403021222252) and the Higher Education Science and Technology Innovation Plan Project of Shanxi (Grant No. 2024L146).

摘要: The growing demand for artificial intelligence and complex computing has underscored the urgent need for advanced data storage technologies. Spin-orbit torque (SOT) has emerged as a leading candidate for high-speed, high-density magnetic random-access memory due to its ultrafast switching speed and low power consumption. This review systematically explores the generation and switching mechanisms of electron-mediated torques (including both conventional SOTs and orbital torques) and magnon-mediated torques. We discuss key materials that enable these effects: heavy metals, topological insulators, low-crystal-symmetry materials, non-collinear antiferromagnets, and altermagnets for conventional SOTs; 3d, 4d, and 5d transition metals for orbital torques; and antiferromagnetic insulator NiO- and multiferroic BiFeO$_{3}$-based sandwich structures for magnon torques. We emphasize that although key components of SOT devices have been demonstrated, numerous promising materials and critical questions regarding their underlying mechanisms remain to be explored. Therefore, this field represents a dynamic and rapidly evolving frontier in spintronics, offering significant potential for advancing next-generation information storage and computational technologies.

关键词: spin-orbit torque, orbital torque, magnon torque, altermagnet

Abstract: The growing demand for artificial intelligence and complex computing has underscored the urgent need for advanced data storage technologies. Spin-orbit torque (SOT) has emerged as a leading candidate for high-speed, high-density magnetic random-access memory due to its ultrafast switching speed and low power consumption. This review systematically explores the generation and switching mechanisms of electron-mediated torques (including both conventional SOTs and orbital torques) and magnon-mediated torques. We discuss key materials that enable these effects: heavy metals, topological insulators, low-crystal-symmetry materials, non-collinear antiferromagnets, and altermagnets for conventional SOTs; 3d, 4d, and 5d transition metals for orbital torques; and antiferromagnetic insulator NiO- and multiferroic BiFeO$_{3}$-based sandwich structures for magnon torques. We emphasize that although key components of SOT devices have been demonstrated, numerous promising materials and critical questions regarding their underlying mechanisms remain to be explored. Therefore, this field represents a dynamic and rapidly evolving frontier in spintronics, offering significant potential for advancing next-generation information storage and computational technologies.

Key words: spin-orbit torque, orbital torque, magnon torque, altermagnet

中图分类号:  (Spin-orbit effects)

  • 75.70.Tj
75.60.Jk (Magnetization reversal mechanisms) 75.76.+j (Spin transport effects) 72.25.-b (Spin polarized transport)