Extremely large magnetoresistance in single-crystalline ZrBi2

doi:10.1088/1674-1056/add246

中国物理B ›› 2025, Vol. 34 ›› Issue (9): 97307-097307.doi: 10.1088/1674-1056/add246

Extremely large magnetoresistance in single-crystalline ZrBi₂

Cundong Li(李存东)^1,2,†, Binbin Ruan(阮彬彬)^3,†, Qingxin Dong(董庆新)^1,2, Jianli Bai(白建利)^1,2, Libo Zhang(张黎博)^1,2, Qiaoyu Liu(刘乔宇)^1,2, Jingwen Cheng(程靖雯)^1,2, Pinyu Liu(刘品宇)^1,2, Yu Huang(黄宇)^1,2, Yingrui Sun(孙英睿)^1,2, Zhian Ren(任治安)^1,2, and Genfu Chen(陈根富)^1,2,4,‡

1 Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;
3 College of Physics and Center of Quantum Materials and Devices, Chongqing University, Chongqing 401331, China;
4 Songshan Lake Materials Laboratory, Dongguan 523808, China

收稿日期:2025-03-10 修回日期:2025-04-28 接受日期:2025-04-30 出版日期:2025-08-21 发布日期:2025-09-15
通讯作者: Genfu Chen E-mail:gfchen@iphy.ac.cn
基金资助:
extremely large magnetoresistance|SdH oscillation|electron-hole compensation

Extremely large magnetoresistance in single-crystalline ZrBi₂

1 Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;
3 College of Physics and Center of Quantum Materials and Devices, Chongqing University, Chongqing 401331, China;
4 Songshan Lake Materials Laboratory, Dongguan 523808, China

Received:2025-03-10 Revised:2025-04-28 Accepted:2025-04-30 Online:2025-08-21 Published:2025-09-15
Contact: Genfu Chen E-mail:gfchen@iphy.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 12274440), the National Key R&D Program of China (Grant No. 2022YFA1403903), and the Synergetic Extreme Condition User Facility (SECUF).

摘要/Abstract

摘要： Magnetoresistance (MR) is a pivotal transport phenomenon within the realm of condensed matter physics. In recent years, materials exhibiting extremely large unsaturated magnetoresistance (XMR), which are often potential topological materials, have garnered significant attention. In this study, we synthesized single crystals of ZrBi$_{2}$ and performed electrical and specific heat measurements on them. The resistivity of ZrBi$_{2}$ displays metallic behavior with a high residual resistance ratio. Notably, the MR of ZrBi$_{2}$ reaches approximately $2.0 \times 10^{3}$% at 2 K and 16 T without saturation. Weak Shubnikov-de Haas oscillations with two frequencies were observed above 13.5 T, which correspond to 237 T and 663 T. Hall effect fitting yields nearly equal concentrations of electron and hole carriers with concentrations of approximately 10$^{21}$ cm$^{-3}$ and mobilities of approximately 5000 cm$^{2}\cdot $V$^{-1}\cdot $s$^{-1}$ at 2 K. The XMR could be attributed to the electron-hole compensation with high mobility.

关键词: extremely large magnetoresistance, SdH oscillation, electron-hole compensation

Abstract: Magnetoresistance (MR) is a pivotal transport phenomenon within the realm of condensed matter physics. In recent years, materials exhibiting extremely large unsaturated magnetoresistance (XMR), which are often potential topological materials, have garnered significant attention. In this study, we synthesized single crystals of ZrBi$_{2}$ and performed electrical and specific heat measurements on them. The resistivity of ZrBi$_{2}$ displays metallic behavior with a high residual resistance ratio. Notably, the MR of ZrBi$_{2}$ reaches approximately $2.0 \times 10^{3}$% at 2 K and 16 T without saturation. Weak Shubnikov-de Haas oscillations with two frequencies were observed above 13.5 T, which correspond to 237 T and 663 T. Hall effect fitting yields nearly equal concentrations of electron and hole carriers with concentrations of approximately 10$^{21}$ cm$^{-3}$ and mobilities of approximately 5000 cm$^{2}\cdot $V$^{-1}\cdot $s$^{-1}$ at 2 K. The XMR could be attributed to the electron-hole compensation with high mobility.

Key words: extremely large magnetoresistance, SdH oscillation, electron-hole compensation

中图分类号: (Magnetoresistance)

73.43.Qt

71.70.Di (Landau levels) 72.15.-v (Electronic conduction in metals and alloys) 72.80.Ga (Transition-metal compounds)

Cundong Li(李存东), Binbin Ruan(阮彬彬), Qingxin Dong(董庆新), Jianli Bai(白建利), Libo Zhang(张黎博), Qiaoyu Liu(刘乔宇), Jingwen Cheng(程靖雯), Pinyu Liu(刘品宇), Yu Huang(黄宇), Yingrui Sun(孙英睿), Zhian Ren(任治安), and Genfu Chen(陈根富). Extremely large magnetoresistance in single-crystalline ZrBi₂[J]. 中国物理B, 2025, 34(9): 97307-097307.

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Extremely large magnetoresistance in single-crystalline ZrBi₂

Extremely large magnetoresistance in single-crystalline ZrBi₂

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