Atomic-level quantitative analysis of electronic functional materials by aberration-corrected STEM

doi:10.1088/1674-1056/ad7afc

中国物理B ›› 2024, Vol. 33 ›› Issue (11): 116802-116802.doi: 10.1088/1674-1056/ad7afc

Atomic-level quantitative analysis of electronic functional materials by aberration-corrected STEM

Wanbo Qu(曲万博)¹, Zhihao Zhao(赵志昊)¹, Yuxuan Yang(杨宇轩)¹, Yang Zhang(张杨)^1,2,3,†, Shengwu Guo(郭生武)¹, Fei Li(李飞)^1,2, Xiangdong Ding(丁向东)¹, Jun Sun(孙军)¹, and Haijun Wu(武海军)^1,‡

1 State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China;
2 Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, and School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, China;
3 Instrumental Analysis Center of Xi'an Jiaotong University, Xi'an Jiaotong University, Xi'an 710049, China

收稿日期:2024-07-09 修回日期:2024-08-27 接受日期:2024-09-14 出版日期:2024-11-15 发布日期:2024-11-15
基金资助:
Project supported by the financial support from the National Key R&D Program of China (Grant No. 2021YFB3201100), the National Natural Science Foundation of China (Grant No. 52172128), and the Top Young Talents Programme of Xi’an Jiaotong University.

Atomic-level quantitative analysis of electronic functional materials by aberration-corrected STEM

1 State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China;
2 Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, and School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, China;
3 Instrumental Analysis Center of Xi'an Jiaotong University, Xi'an Jiaotong University, Xi'an 710049, China

Received:2024-07-09 Revised:2024-08-27 Accepted:2024-09-14 Online:2024-11-15 Published:2024-11-15
Contact: Yang Zhang, Haijun Wu E-mail:zhangyang2020@xjtu.edu.cn;wuhaijunnavy@xjtu.edu.cn
Supported by:
Project supported by the financial support from the National Key R&D Program of China (Grant No. 2021YFB3201100), the National Natural Science Foundation of China (Grant No. 52172128), and the Top Young Talents Programme of Xi’an Jiaotong University.

摘要/Abstract

摘要： The stable sub-angstrom resolution of the aberration-corrected scanning transmission electron microscope (AC-STEM) makes it an advanced and practical characterization technique for all materials. Owing to the prosperous advancement in computational technology, specialized software and programs have emerged as potent facilitators across the entirety of electron microscopy characterization process. Utilizing advanced image processing algorithms promotes the rectification of image distortions, concurrently elevating the overall image quality to superior standards. Extracting high-resolution, pixel-level discrete information and converting it into atomic-scale, followed by performing statistical calculations on the physical matters of interest through quantitative analysis, represent an effective strategy to maximize the value of electron microscope images. The efficacious utilization of quantitative analysis of electron microscope images has become a progressively prominent consideration for materials scientists and electron microscopy researchers. This article offers a concise overview of the pivotal procedures in quantitative analysis and summarizes the computational methodologies involved from three perspectives: contrast, lattice and strain, as well as atomic displacements and polarization. It further elaborates on practical applications of these methods in electronic functional materials, notably in piezoelectrics/ferroelectrics and thermoelectrics. It emphasizes the indispensable role of quantitative analysis in fundamental theoretical research, elucidating the structure-property correlations in high-performance systems, and guiding synthesis strategies.

关键词: AC-STEM, quantitative analysis, polarization, electronic functional materials

Abstract: The stable sub-angstrom resolution of the aberration-corrected scanning transmission electron microscope (AC-STEM) makes it an advanced and practical characterization technique for all materials. Owing to the prosperous advancement in computational technology, specialized software and programs have emerged as potent facilitators across the entirety of electron microscopy characterization process. Utilizing advanced image processing algorithms promotes the rectification of image distortions, concurrently elevating the overall image quality to superior standards. Extracting high-resolution, pixel-level discrete information and converting it into atomic-scale, followed by performing statistical calculations on the physical matters of interest through quantitative analysis, represent an effective strategy to maximize the value of electron microscope images. The efficacious utilization of quantitative analysis of electron microscope images has become a progressively prominent consideration for materials scientists and electron microscopy researchers. This article offers a concise overview of the pivotal procedures in quantitative analysis and summarizes the computational methodologies involved from three perspectives: contrast, lattice and strain, as well as atomic displacements and polarization. It further elaborates on practical applications of these methods in electronic functional materials, notably in piezoelectrics/ferroelectrics and thermoelectrics. It emphasizes the indispensable role of quantitative analysis in fundamental theoretical research, elucidating the structure-property correlations in high-performance systems, and guiding synthesis strategies.

Key words: AC-STEM, quantitative analysis, polarization, electronic functional materials

中图分类号: (Scanning transmission electron microscopy (STEM))

68.37.Ma

06.60.-c (Laboratory procedures) 77.22.Ej (Polarization and depolarization) 77.84.-s (Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)

Wanbo Qu(曲万博), Zhihao Zhao(赵志昊), Yuxuan Yang(杨宇轩), Yang Zhang(张杨), Shengwu Guo(郭生武), Fei Li(李飞), Xiangdong Ding(丁向东), Jun Sun(孙军), and Haijun Wu(武海军). Atomic-level quantitative analysis of electronic functional materials by aberration-corrected STEM[J]. 中国物理B, 2024, 33(11): 116802-116802.

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Atomic-level quantitative analysis of electronic functional materials by aberration-corrected STEM

Atomic-level quantitative analysis of electronic functional materials by aberration-corrected STEM

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