中国物理B ›› 2024, Vol. 33 ›› Issue (9): 96804-096804.doi: 10.1088/1674-1056/ad641f

所属专题： SPECIAL TOPIC — Stephen J. Pennycook: A research life in atomic-resolution STEM and EELS

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Atomically self-healing of structural defects in monolayer WSe2

Kangshu Li(李康舒)1, Junxian Li(李俊贤)1, Xiaocang Han(韩小藏)1, Wu Zhou(周武)2, and Xiaoxu Zhao(赵晓续)1,3,†   

  1. 1 School of Materials Science and Engineering, Peking University, Beijing 100871, China;
    2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;
    3 AI for Science Institute, Beijing 100084, China
  • 收稿日期:2024-05-01 修回日期:2024-07-12 接受日期:2024-07-17 发布日期:2024-08-30
  • 通讯作者: Xiaoxu Zhao E-mail:xiaoxuzhao@pku.edu.cn
  • 基金资助:
    X.Z. thanks the Beijing Natural Science Foundation (Grant Nos. JQ24010 and Z220020), the Fundamental Research Funds for the Central Universities, and the National Natural Science Foundation of China (Grant No. 52273279). Project supported by the Electron Microscopy Laboratory of Peking University, China for the use of Nion U-HERMES200 scanning transmission electron microscopy.

Atomically self-healing of structural defects in monolayer WSe2

Kangshu Li(李康舒)1, Junxian Li(李俊贤)1, Xiaocang Han(韩小藏)1, Wu Zhou(周武)2, and Xiaoxu Zhao(赵晓续)1,3,†   

  1. 1 School of Materials Science and Engineering, Peking University, Beijing 100871, China;
    2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;
    3 AI for Science Institute, Beijing 100084, China
  • Received:2024-05-01 Revised:2024-07-12 Accepted:2024-07-17 Published:2024-08-30
  • Contact: Xiaoxu Zhao E-mail:xiaoxuzhao@pku.edu.cn
  • Supported by:
    X.Z. thanks the Beijing Natural Science Foundation (Grant Nos. JQ24010 and Z220020), the Fundamental Research Funds for the Central Universities, and the National Natural Science Foundation of China (Grant No. 52273279). Project supported by the Electron Microscopy Laboratory of Peking University, China for the use of Nion U-HERMES200 scanning transmission electron microscopy.

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摘要： Minimizing disorder and defects is crucial for realizing the full potential of two-dimensional transition metal dichalcogenides (TMDs) materials and improving device performance to desired properties. However, the methods in defect control currently face challenges with overly large operational areas and a lack of precision in targeting specific defects. Therefore, we propose a new method for the precise and universal defect healing of TMD materials, integrating real-time imaging with scanning transmission electron microscopy (STEM). This method employs electron beam irradiation to stimulate the diffusion migration of surface-adsorbed adatoms on TMD materials grown by low-temperature molecular beam epitaxy (MBE), and heal defects within the diffusion range. This approach covers defect repairs ranging from zero-dimensional vacancy defects to two-dimensional grain orientation alignment, demonstrating its universality in terms of the types of samples and defects. These findings offer insights into the use of atomic-level focused electron beams at appropriate voltages in STEM for defect healing, providing valuable experience for achieving atomic-level precise fabrication of TMD materials.

关键词: scanning transmission electron microscopy (STEM), atom manipulation, nanoscale materials and structures: fabrication and characterization, new materials: theory, design, fabrication

Abstract: Minimizing disorder and defects is crucial for realizing the full potential of two-dimensional transition metal dichalcogenides (TMDs) materials and improving device performance to desired properties. However, the methods in defect control currently face challenges with overly large operational areas and a lack of precision in targeting specific defects. Therefore, we propose a new method for the precise and universal defect healing of TMD materials, integrating real-time imaging with scanning transmission electron microscopy (STEM). This method employs electron beam irradiation to stimulate the diffusion migration of surface-adsorbed adatoms on TMD materials grown by low-temperature molecular beam epitaxy (MBE), and heal defects within the diffusion range. This approach covers defect repairs ranging from zero-dimensional vacancy defects to two-dimensional grain orientation alignment, demonstrating its universality in terms of the types of samples and defects. These findings offer insights into the use of atomic-level focused electron beams at appropriate voltages in STEM for defect healing, providing valuable experience for achieving atomic-level precise fabrication of TMD materials.

Key words: scanning transmission electron microscopy (STEM), atom manipulation, nanoscale materials and structures: fabrication and characterization, new materials: theory, design, fabrication

中图分类号:  (Scanning transmission electron microscopy (STEM))

  • 68.37.Ma
81.16.Ta (Atom manipulation) 81.07.-b (Nanoscale materials and structures: fabrication and characterization) 81.05.Zx (New materials: theory, design, and fabrication)