中国物理B ›› 2024, Vol. 33 ›› Issue (5): 58702-058702.doi: 10.1088/1674-1056/ad1b3f
In situ luminescence measurements of GaN/Al2O3 film under different energy proton irradiations
Wenli Jiang(蒋文丽)1, Xiao Ouyang(欧阳潇)1, Menglin Qiu(仇猛淋)1,2,†, Minju Ying(英敏菊)1,2,‡, Lin Chen(陈琳)1,2, Pan Pang(庞盼)2, Chunlei Zhang(张春雷)1,2, Yaofeng Zhang(张耀锋)1,2, and Bin Liao(廖斌)1,2
- 1 Key Laboratory of Beam Technology of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China;
2 Institute of Radiation Technology, Beijing Academy of Science and Technology, Beijing 100875, China
In situ luminescence measurements of GaN/Al2O3 film under different energy proton irradiations
Wenli Jiang(蒋文丽)1, Xiao Ouyang(欧阳潇)1, Menglin Qiu(仇猛淋)1,2,†, Minju Ying(英敏菊)1,2,‡, Lin Chen(陈琳)1,2, Pan Pang(庞盼)2, Chunlei Zhang(张春雷)1,2, Yaofeng Zhang(张耀锋)1,2, and Bin Liao(廖斌)1,2
- 1 Key Laboratory of Beam Technology of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China;
2 Institute of Radiation Technology, Beijing Academy of Science and Technology, Beijing 100875, China
摘要： Ion beam-induced luminescence (IBIL) experiments were performed to investigate the in situ luminescence of GaN/Al$_{2}$O$_{3}$ at varying ion energies, which allowed for the measurement of defects at different depths within the material. The energies of H$^{+}$ were set to 500 keV, 640 keV and 2 MeV, the Bragg peaks of which correspond to the GaN film, GaN/Al$_{2}$O$_{3}$ heterojunction and Al$_{2}$O$_{3}$ substrate, respectively. A photoluminescence measurement at 250 K was also performed for comparison, during which only near band edge (NBE) and yellow band luminescence in the GaN film were observed. The evolution of the luminescence of the NBE and yellow band in the GaN film was discussed, and both exhibited a decrease with the fluence of H$^{+}$. Additionally, the luminescence of F centers, induced by oxygen vacancies, and Cr$^{3+}$, resulting from the $^{2}$E$\,\to^{4}$A$_{2}$ radiative transition in Al$_{2}$O$_{3}$, were measured using 2 MeV H$^{+}$. The luminescence intensity of F centers increases gradually with the fluence of H$^{+}$. The luminescence evolution of Cr$^{3+}$ is consistent with a yellow band center, attributed to its weak intensity, and it is situated within the emission band of the yellow band in the GaN film. Our results show that IBIL measurement can effectively detect the luminescence behavior of multilayer films by adjusting the ion energy. Luminescence measurement can be excited by various techniques, but IBIL can satisfy in situ luminescence measurement, and multilayer structural materials of tens of micrometers can be measured through IBIL by adjusting the energy of the inducing ions. The evolution of defects at different layers with ion fluence can be obtained.
中图分类号: (Luminescence)
- 87.15.mq