Materials and device engineering to achieve high-performance quantum dots light emitting diodes for display applications

doi:10.1088/1674-1056/acb916

中国物理B ›› 2023, Vol. 32 ›› Issue (12): 128506-128506.doi: 10.1088/1674-1056/acb916

所属专题： SPECIAL TOPIC — Physics in micro-LED and quantum dots devices

Materials and device engineering to achieve high-performance quantum dots light emitting diodes for display applications

Changfeng Han(韩长峰)^1,2,3, Ruoxi Qian(钱若曦)⁴, Chaoyu Xiang(向超宇)^1,2,3,†, and Lei Qian(钱磊)^5,‡

1 Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo 315300, China;
2 Division of Functional Materials and Nanodevices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China;
3 Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo 315201, China;
4 Jiangsu JITRI Molecular Engineering Inst. Co., Ltd., Changshu 215500, China;
5 Shenzhen Research Institute Beijing Institute of Technology, Shenzhen 518057, China

收稿日期:2022-11-04 修回日期:2023-01-10 接受日期:2023-02-06 出版日期:2023-11-14 发布日期:2023-11-14
通讯作者: Chaoyu Xiang, Lei Qian E-mail:xiangchaoyu@nimte.ac.cn;qian_lei@126.com
基金资助:
Project supported by Leading innovation and entrepreneurship team of Zhejiang Province of China (Grant No.2021R01003), Science and Technology Innovation 2025 Major Project of Ningbo (Grant No.2022Z085), Ningbo 3315 Programme (Grant No.2020A-01-B), YONGJIANG Talent Introduction Programme (Grant No.2021A-038-B), and Zhujiang Talent Programme (Grant No.2016LJ06C621).

Materials and device engineering to achieve high-performance quantum dots light emitting diodes for display applications

Changfeng Han(韩长峰)^1,2,3, Ruoxi Qian(钱若曦)⁴, Chaoyu Xiang(向超宇)^1,2,3,†, and Lei Qian(钱磊)^5,‡

1 Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo 315300, China;
2 Division of Functional Materials and Nanodevices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China;
3 Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo 315201, China;
4 Jiangsu JITRI Molecular Engineering Inst. Co., Ltd., Changshu 215500, China;
5 Shenzhen Research Institute Beijing Institute of Technology, Shenzhen 518057, China

Received:2022-11-04 Revised:2023-01-10 Accepted:2023-02-06 Online:2023-11-14 Published:2023-11-14
Contact: Chaoyu Xiang, Lei Qian E-mail:xiangchaoyu@nimte.ac.cn;qian_lei@126.com
Supported by:
Project supported by Leading innovation and entrepreneurship team of Zhejiang Province of China (Grant No.2021R01003), Science and Technology Innovation 2025 Major Project of Ningbo (Grant No.2022Z085), Ningbo 3315 Programme (Grant No.2020A-01-B), YONGJIANG Talent Introduction Programme (Grant No.2021A-038-B), and Zhujiang Talent Programme (Grant No.2016LJ06C621).

摘要/Abstract

摘要： Quantum dots (QDs) have attracted wide attention from academia and industry because of their advantages such as high emitting efficiency, narrow half-peak width, and continuously adjustable emitting wavelength. QDs light emitting diodes (QLEDs) are expected to become the next generation commercial display technology. This paper reviews the progress of QLED from physical mechanism, materials, to device engineering. The strategies to improve QLED performance from the perspectives of quantum dot materials and device structures are summarized.

关键词: quantum dots, light emitting diodes, device engineering

Abstract: Quantum dots (QDs) have attracted wide attention from academia and industry because of their advantages such as high emitting efficiency, narrow half-peak width, and continuously adjustable emitting wavelength. QDs light emitting diodes (QLEDs) are expected to become the next generation commercial display technology. This paper reviews the progress of QLED from physical mechanism, materials, to device engineering. The strategies to improve QLED performance from the perspectives of quantum dot materials and device structures are summarized.

Key words: quantum dots, light emitting diodes, device engineering

中图分类号: (Nanoelectronic devices)

85.35.-p

61.46.Df (Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots))

Changfeng Han(韩长峰), Ruoxi Qian(钱若曦), Chaoyu Xiang(向超宇), and Lei Qian(钱磊). Materials and device engineering to achieve high-performance quantum dots light emitting diodes for display applications[J]. 中国物理B, 2023, 32(12): 128506-128506.

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Materials and device engineering to achieve high-performance quantum dots light emitting diodes for display applications

Materials and device engineering to achieve high-performance quantum dots light emitting diodes for display applications

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