中国物理B ›› 2010, Vol. 19 ›› Issue (3): 37503-037503.doi: 10.1088/1674-1056/19/3/037503

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Thermal relaxation of exchange bias field in an exchange coupled CoFe/IrMn bilayer

祁先进, 王寅岗, 周广宏, 李子全, 郭敏   

  1. College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
  • 收稿日期:2009-05-04 修回日期:2009-06-10 出版日期:2010-03-15 发布日期:2010-03-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No.~50671048).

Thermal relaxation of exchange bias field in an exchange coupled CoFe/IrMn bilayer

Qi Xian-Jin(祁先进), Wang Yin-Gang(王寅岗)†, Zhou Guang-Hong(周广宏), Li Zi-Quan(李子全), and Guo Min(郭敏)   

  1. College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
  • Received:2009-05-04 Revised:2009-06-10 Online:2010-03-15 Published:2010-03-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No.~50671048).

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摘要： This paper reports that a CoFe/IrMn bilayer was deposited by high vacuum magnetron sputtering on silicon wafer substrate; the thermal relaxation of the CoFe/IrMn bilayer is investigated by means of holding the film in a negative saturation field at various temperatures. The exchange bias decreases with increasing period of time while holding the film in a negative saturation field at a given temperature. Increasing the temperature accelerates the decrease of exchange field. The results can be explained by the quantitative model of the nucleation and growth of antiferromagnetic domains suggested by Xi H W et al. [2007 Phys. Rev. B 75 014434], and it is believed that two energy barriers exist in the investigated temperature range.

Abstract: This paper reports that a CoFe/IrMn bilayer was deposited by high vacuum magnetron sputtering on silicon wafer substrate; the thermal relaxation of the CoFe/IrMn bilayer is investigated by means of holding the film in a negative saturation field at various temperatures. The exchange bias decreases with increasing period of time while holding the film in a negative saturation field at a given temperature. Increasing the temperature accelerates the decrease of exchange field. The results can be explained by the quantitative model of the nucleation and growth of antiferromagnetic domains suggested by Xi H W et al. [2007 Phys. Rev. B 75 014434], and it is believed that two energy barriers exist in the investigated temperature range.

Key words: thermal relaxation, exchange bias, energy barrier, CoFe/IrMn bilayer

中图分类号:  (Magnetic properties of monolayers and thin films)

  • 75.70.Ak
75.50.Ee (Antiferromagnetics) 75.60.Ch (Domain walls and domain structure) 68.55.A- (Nucleation and growth) 75.60.Ej (Magnetization curves, hysteresis, Barkhausen and related effects)