中国物理B ›› 2011, Vol. 20 ›› Issue (5): 57503-057503.doi: 10.1088/1674-1056/20/5/057503

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Influence of Ga+ ion irradiation on thermal relaxation of exchange bias field in exchange-coupled CoFe/IrMn bilayers

祁先进1, 王寅岗1, 缪雪飞1, 李子全1, 黄一中2   

  1. (1)College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China; (2)Department of Materials, Oxford University, Oxford OX1 3PH, UK;School of Materials Science and Engineering, Nanyang Technological University, Singapore
  • 收稿日期:2010-07-20 修回日期:2010-12-16 出版日期:2011-05-15 发布日期:2011-05-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 50671048).

Influence of Ga+ ion irradiation on thermal relaxation of exchange bias field in exchange-coupled CoFe/IrMn bilayers

Qi Xian-Jin(祁先进)a), Wang Yin-Gang(王寅岗) a)†, Miao Xue-Fei(缪雪飞)a), Li Zi-Quan(李子全)a), and Huang Yi-Zhong(黄一中) b)c)   

  1. a College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China; b Department of Materials, Oxford University, Oxford OX1 3PH, UK; c School of Materials Science and Engineering, Nanyang Technological University, Singapore
  • Received:2010-07-20 Revised:2010-12-16 Online:2011-05-15 Published:2011-05-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 50671048).

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摘要： This paper reports that the CoFe/IrMn bilayers are deposited by magnetron sputtering on the surfaces of thermally-oxidized Si substrates. It investigates the thermal relaxations of both non-irradiated and Ga+ ion irradiated CoFe/IrMn bilayers by means of holding the bilayers in a negative saturation field. The results show that exchange bias field decreases with the increase of holding time period for both non-irradiated and Ga+ ion irradiated CoFe/IrMn bilayers. Exchange bias field is also found to be smaller upon irradiation at higher ion dose. This reduction of exchange bias field is attributed to the change of energy barrier induced by ion-radiation.

关键词: thermal relaxation, exchange bias, ion irradiation, energy barrier

Abstract: This paper reports that the CoFe/IrMn bilayers are deposited by magnetron sputtering on the surfaces of thermally-oxidized Si substrates. It investigates the thermal relaxations of both non-irradiated and Ga+ ion irradiated CoFe/IrMn bilayers by means of holding the bilayers in a negative saturation field. The results show that exchange bias field decreases with the increase of holding time period for both non-irradiated and Ga+ ion irradiated CoFe/IrMn bilayers. Exchange bias field is also found to be smaller upon irradiation at higher ion dose. This reduction of exchange bias field is attributed to the change of energy barrier induced by ion-radiation.

Key words: thermal relaxation, exchange bias, ion irradiation, energy barrier

中图分类号:  (Magnetic aftereffects)

  • 75.60.Lr
75.60.Jk (Magnetization reversal mechanisms) 75.60.Ej (Magnetization curves, hysteresis, Barkhausen and related effects)