Application of graphene vertical field effect to regulation of organic light-emitting transistors

doi:10.1088/1674-1056/ab81f3

中国物理B ›› 2020, Vol. 29 ›› Issue (5): 57401-057401.doi: 10.1088/1674-1056/ab81f3

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Application of graphene vertical field effect to regulation of organic light-emitting transistors

Hang Song(宋航), Hao Wu(吴昊), Hai-Yang Lu(陆海阳), Zhi-Hao Yang(杨志浩), Long Ba(巴龙)

State Key Laboratory of Bioelectronics, Southeast University, Nanjing 210096, China

收稿日期:2019-11-15 修回日期:2020-03-09 出版日期:2020-05-05 发布日期:2020-05-05
通讯作者: Long Ba E-mail:balong@seu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 31872901) and the National Key Research and Development Program of China (Grant No. 2016YFA0501602).

Application of graphene vertical field effect to regulation of organic light-emitting transistors

Hang Song(宋航), Hao Wu(吴昊), Hai-Yang Lu(陆海阳), Zhi-Hao Yang(杨志浩), Long Ba(巴龙)

State Key Laboratory of Bioelectronics, Southeast University, Nanjing 210096, China

Received:2019-11-15 Revised:2020-03-09 Online:2020-05-05 Published:2020-05-05
Contact: Long Ba E-mail:balong@seu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 31872901) and the National Key Research and Development Program of China (Grant No. 2016YFA0501602).

摘要/Abstract

摘要： The luminescence intensity regulation of organic light-emitting transistor (OLED) device can be achieved effectively by the combination of graphene vertical field effect transistor (GVFET) and OLED. In this paper, we fabricate and characterize the graphene vertical field-effect transistor with gate dielectric of ion-gel film, confirming that its current switching ratio reaches up to 10². Because of the property of high light transmittance in ion-gel film, the OLED device prepared with graphene/PEDOT:PSS as composite anode exhibits good optical properties. We also prepare the graphene vertical organic light-emitting field effect transistor (GVOLEFET) by the combination of GVFET and graphene OLED, analyzing its electrical and optical properties, and confirming that the luminescence intensity can be significantly changed by regulating the gate voltage.

关键词: graphene vertical field effect transistor, organic light-emitting transistor, ion-gel film, gate voltage regulation

Abstract: The luminescence intensity regulation of organic light-emitting transistor (OLED) device can be achieved effectively by the combination of graphene vertical field effect transistor (GVFET) and OLED. In this paper, we fabricate and characterize the graphene vertical field-effect transistor with gate dielectric of ion-gel film, confirming that its current switching ratio reaches up to 10². Because of the property of high light transmittance in ion-gel film, the OLED device prepared with graphene/PEDOT:PSS as composite anode exhibits good optical properties. We also prepare the graphene vertical organic light-emitting field effect transistor (GVOLEFET) by the combination of GVFET and graphene OLED, analyzing its electrical and optical properties, and confirming that the luminescence intensity can be significantly changed by regulating the gate voltage.

Key words: graphene vertical field effect transistor, organic light-emitting transistor, ion-gel film, gate voltage regulation

中图分类号: (Optical properties)

74.25.Gz

81.05.ue (Graphene) 85.30.Tv (Field effect devices)

宋航, 吴昊, 陆海阳, 杨志浩, 巴龙. Application of graphene vertical field effect to regulation of organic light-emitting transistors[J]. 中国物理B, 2020, 29(5): 57401-057401.

Hang Song(宋航), Hao Wu(吴昊), Hai-Yang Lu(陆海阳), Zhi-Hao Yang(杨志浩), Long Ba(巴龙). Application of graphene vertical field effect to regulation of organic light-emitting transistors[J]. Chin. Phys. B, 2020, 29(5): 57401-057401.

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Application of graphene vertical field effect to regulation of organic light-emitting transistors

Application of graphene vertical field effect to regulation of organic light-emitting transistors

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