The effects of electric and magnetic fields on the current spin polarization and magnetoresistance in a ferromagnetic/organic semiconductor/ferromagnetic (FM/OSC/FM) system

doi:10.1088/1674-1056/21/10/108508

中国物理B ›› 2012, Vol. 21 ›› Issue (10): 108508-108508.doi: 10.1088/1674-1056/21/10/108508

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

The effects of electric and magnetic fields on the current spin polarization and magnetoresistance in a ferromagnetic/organic semiconductor/ferromagnetic (FM/OSC/FM) system

王玉梅, 任俊峰, 原晓波, 窦兆涛, 胡贵超

College of Physics and Electronics, Shandong Normal University, Jinan 250014, China

收稿日期:2011-12-22 修回日期:2012-05-21 出版日期:2012-09-01 发布日期:2012-09-01
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 10904083 and 10904084), the Shandong Provincial Distinguished Middle-Aged and Young Scientist Encourage and Reward Foundation, China (Grant No. BS2009CL008), and the Science and Technology Foundation for Institution of Higher Education of Shandong Province, China (Grant No. J09LA03).

The effects of electric and magnetic fields on the current spin polarization and magnetoresistance in a ferromagnetic/organic semiconductor/ferromagnetic (FM/OSC/FM) system

Wang Yu-Mei (王玉梅), Ren Jun-Feng (任俊峰), Yuan Xiao-Bo (原晓波), Dou Zhao-Tao (窦兆涛), Hu Gui-Chao (胡贵超)

College of Physics and Electronics, Shandong Normal University, Jinan 250014, China

Received:2011-12-22 Revised:2012-05-21 Online:2012-09-01 Published:2012-09-01
Contact: Ren Jun-Feng E-mail:renjf@sdnu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 10904083 and 10904084), the Shandong Provincial Distinguished Middle-Aged and Young Scientist Encourage and Reward Foundation, China (Grant No. BS2009CL008), and the Science and Technology Foundation for Institution of Higher Education of Shandong Province, China (Grant No. J09LA03).

摘要/Abstract

摘要： From experimental results of spin polarized injection and transport in organic semiconductors (OSCs), we theoretically study the current spin polarization and magnetoresistance under an electric and a magnetic field in a ferromagnetic/organic semiconductor/ferromagnetic (FM/OSC/FM) sandwich structure according to the spin drift-diffusion theory and Ohm's law. From the calculations, it is found that the interfacial current spin polarization is enhanced by several orders of magnitude through tuning the magnetic and electric fields by taking into account the specific characteristics of OSC. Furthermore, the effects of the electric and magnetic fields on the magnetoresistance are also discussed in the sandwich structure.

关键词: organic spintronics, spin diffusion and drift, current spin polarization, magnetoresistance

Abstract: From experimental results of spin polarized injection and transport in organic semiconductors (OSCs), we theoretically study the current spin polarization and magnetoresistance under an electric and a magnetic field in a ferromagnetic/organic semiconductor/ferromagnetic (FM/OSC/FM) sandwich structure according to the spin drift-diffusion theory and Ohm's law. From the calculations, it is found that the interfacial current spin polarization is enhanced by several orders of magnitude through tuning the magnetic and electric fields by taking into account the specific characteristics of OSC. Furthermore, the effects of the electric and magnetic fields on the magnetoresistance are also discussed in the sandwich structure.

Key words: organic spintronics, spin diffusion and drift, current spin polarization, magnetoresistance

中图分类号: (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)

85.75.-d

72.25.Dc (Spin polarized transport in semiconductors) 72.25.Mk (Spin transport through interfaces) 75.47.-m (Magnetotransport phenomena; materials for magnetotransport)

王玉梅, 任俊峰, 原晓波, 窦兆涛, 胡贵超. The effects of electric and magnetic fields on the current spin polarization and magnetoresistance in a ferromagnetic/organic semiconductor/ferromagnetic (FM/OSC/FM) system[J]. 中国物理B, 2012, 21(10): 108508-108508.

Wang Yu-Mei (王玉梅), Ren Jun-Feng (任俊峰), Yuan Xiao-Bo (原晓波), Dou Zhao-Tao (窦兆涛), Hu Gui-Chao (胡贵超). The effects of electric and magnetic fields on the current spin polarization and magnetoresistance in a ferromagnetic/organic semiconductor/ferromagnetic (FM/OSC/FM) system[J]. Chin. Phys. B, 2012, 21(10): 108508-108508.

参考文献 19

[1]	Wolf S A, Awschalom D D, Buhrman R A, Daughton J M, Molnár S V, Roukes M L, Chtchelkanova A Y and Treger D M 2001 Science 294 1488
[2]	Naber W J M, Faez S and Gvan der Wie W 2007 J. Phys. D: Appl. Phys. 40 R205
[3]	Mi Y L, Zhang M and Yan H 2008 Phys. Lett. A 372 6434
[4]	Friend R H, Gymer R W, Holmes A B, Burroughes J H, Marks R N, Taliani C, Bradley D D C, Dos Santos D A, Brédas J L, Lögdlund M and Salaneck W R 1999 Nature 397 121
[5]	Voss D 2000 Nature 407 442
[6]	Dediu V A, Hueso L E, Bergenti I and Taliani C 2009 Nature Mater. 8 707
[7]	Dediu V, Murgia M, Matacotta F C, Taliani C and Barbanera S 2002 Solid State Commun. 122 181
[8]	Xiong Z H, Wu D, Valy Vardeny Z and Shi J 2004 Nature 427 821
[9]	Dediu V, Hueso L E, Bergenti I, Riminucci A, Borgatti F, Graziosi P, Newby C, Casoli F, de Jong M P, Taliani C and Zhan Y 2008 Phys. Rev. B 78 115203
[10]	Barraud C, Seneor P, Mattana R, Fusil S, Bouzehouane K, Deranlot C, Graziosi P, Hueso L, Bergenti I, Dediu V, Petroff F and Fert A 2010 Nature Phys. 6 625
[11]	Ren J F, Zhang Y B and Xie S J 2008 Org. Electron. 9 1017
[12]	Yu Z G and Flatté M E 2002 Phys. Rev. B 66 235302
[13]	Yu Z G, Berding M A and Krishnamurthy S K 2005 Phys. Rev. B 71 060408(R)
[14]	Bobbert P A, Wagemans W, van Oost F W A, Koopmans B and Wohlgenannt M 2009 Phy. Rev. Lett. 102 156604
[15]	Ren J F and Xiu M X 2008 Chin. Phys. Lett. 25 2618
[16]	Zhang Y B, Ren J F, Hu G C and Xie S J 2008 Org. Electron. 9 687
[17]	Yu Z G and Flatté M E 2002 Phys. Rev. B 66 201202(R)
[18]	Yu Z G, Berding M A and Krishnamurthy S 2005 J. Appl. Phys. 97 024510
[19]	Ma Y N, Ren J F, Zhang Y B, Liu D S and Xie S J 2007 Chin. Phys. Lett. 24 1697

The effects of electric and magnetic fields on the current spin polarization and magnetoresistance in a ferromagnetic/organic semiconductor/ferromagnetic (FM/OSC/FM) system

The effects of electric and magnetic fields on the current spin polarization and magnetoresistance in a ferromagnetic/organic semiconductor/ferromagnetic (FM/OSC/FM) system

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 19

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Jingyuan Zhong(钟景元), Jincheng Zhuang(庄金呈), and Yi Du(杜轶). Recent progress on the planar Hall effect in quantum materials[J]. 中国物理B, 2023, 32(4): 47203-047203.
[2]	Zhi-Wei Hu(胡志伟) and Xiang-Gang Qiu(邱祥冈). Abnormal magnetoresistance effect in the Nb/Si superconductor-semiconductor heterojunction[J]. 中国物理B, 2023, 32(3): 37401-037401.
[3]	Zhihong Lu(陆知宏), Shuai Ji(纪帅), and Jianzhong Yang(杨建中). Measurement of T wave in magnetocardiography using tunnel magnetoresistance sensor[J]. 中国物理B, 2023, 32(2): 20703-020703.
[4]	Wenyu Huang(黄文宇), Cangmin Wang(王藏敏), Yichao Liu(刘艺超), Shaoting Wang(王绍庭), Weifeng Ge(葛威锋), Huaili Qiu(仇怀利), Yuanjun Yang(杨远俊), Ting Zhang(张霆), Hui Zhang(张汇), and Chen Gao(高琛). Strain-mediated magnetoelectric control of tunneling magnetoresistance in magnetic tunneling junction/ferroelectric hybrid structures[J]. 中国物理B, 2022, 31(9): 97502-097502.
[5]	Shan-Shan Chen(陈珊珊), Yang Yang(杨阳), and Fan Yang(杨帆). Analytical formula describing the non-saturating linear magnetoresistance in inhomogeneous conductors[J]. 中国物理B, 2022, 31(8): 87303-087303.
[6]	Zhaocong Huang(黄兆聪), Wenqing Liu(刘文卿), Jian Liang(梁健), Qingjie Guo(郭庆杰), Ya Zhai(翟亚), and Yongbing Xu(徐永兵). Spin transport in epitaxial Fe₃O₄/GaAs lateral structured devices[J]. 中国物理B, 2022, 31(6): 68505-068505.
[7]	Wen-Chong Li(李文充), Ling-Xiao Zhao(赵凌霄), Hai-Jun Zhao(赵海军),Gen-Fu Chen(陈根富), and Zhi-Xiang Shi(施智祥). Maximum entropy mobility spectrum analysis for the type-I Weyl semimetal TaAs[J]. 中国物理B, 2022, 31(5): 57103-057103.
[8]	Pei-Sen Li(李裴森), Jun-Ping Peng(彭俊平), Yue-Guo Hu(胡悦国), Yan-Rui Guo(郭颜瑞), Wei-Cheng Qiu(邱伟成), Rui-Nan Wu(吴瑞楠), Meng-Chun Pan(潘孟春), Jia-Fei Hu(胡佳飞), Di-Xiang Chen(陈棣湘), and Qi Zhang(张琦). Magnetoresistance effect in vertical NiFe/graphene/NiFe junctions[J]. 中国物理B, 2022, 31(3): 38502-038502.
[9]	Rui-Shu Yang(杨睿姝), Ding-Bang Wang(王定邦), Yang Zhao(赵阳), Shuan-Hu Wang(王拴虎), and Ke-Xin Jin(金克新). Large positive magnetoresistance in photocarrier-doped potassium tantalites[J]. 中国物理B, 2022, 31(12): 127302-127302.
[10]	Chunli Yao(姚春丽), Tingna Shao(邵婷娜), Mingrui Liu(刘明睿), Zitao Zhang(张子涛), Weimin Jiang(姜伟民), Qiang Zhao(赵强), Yujie Qiao(乔宇杰), Meihui Chen(陈美慧), Xingyu Chen(陈星宇), Ruifen Dou(窦瑞芬), Changmin Xiong(熊昌民), and Jiacai Nie(聂家财). Sign reversal of anisotropic magnetoresistance and anomalous thickness-dependent resistivity in Sr₂CrWO₆/SrTiO₃ films[J]. 中国物理B, 2022, 31(10): 107302-107302.
[11]	Yanbang Chu(褚衍邦), Le Liu(刘乐), Yiru Ji(季怡汝), Jinpeng Tian(田金朋), Fanfan Wu(吴帆帆), Jian Tang(汤建), Yalong Yuan(袁亚龙), Yanchong Zhao(赵岩翀), Xiaozhou Zan(昝晓州), Rong Yang(杨蓉), Kenji Watanabe, Takashi Taniguchi, Dongxia Shi(时东霞), Wei Yang(杨威), and Guangyu Zhang(张广宇). Observation of quadratic magnetoresistance in twisted double bilayer graphene[J]. 中国物理B, 2022, 31(10): 107201-107201.
[12]	Runrun Hao(郝润润), Kun Zhang(张昆), Yinggang Li(李迎港), Qiang Cao(曹强), Xueying Zhang(张学莹), Dapeng Zhu(朱大鹏), and Weisheng Zhao(赵巍胜). Probing the magnetization switching with in-plane magnetic anisotropy through field-modified magnetoresistance measurement[J]. 中国物理B, 2022, 31(1): 17502-017502.
[13]	Xu-Chuan Wu(吴徐传), Shen Xu(徐升), Jian-Feng Zhang(张建丰), Huan Ma(马欢), Kai Liu(刘凯), Tian-Long Xia(夏天龙), and Shan-Cai Wang(王善才). High-resolution angle-resolved photoemission study of large magnetoresistance topological semimetal CaAl₄[J]. 中国物理B, 2021, 30(9): 97303-097303.
[14]	Peng-Bin Niu(牛鹏斌), Bo-Xiang Cui(崔博翔), and Hong-Gang Luo(罗洪刚). Negative tunnel magnetoresistance in a quantum dot induced by interplay of a Majorana fermion and thermal-driven ferromagnetic leads[J]. 中国物理B, 2021, 30(9): 97401-097401.
[15]	Guankai Lin(林冠凯), Haoru Wang(王昊儒), Xuhui Cai(蔡旭晖), Wei Tong(童伟), and Hong Zhu(朱弘). Current-dependent positive magnetoresistance inLa_0.8Ba_0.2MnO₃ ultrathin films[J]. 中国物理B, 2021, 30(9): 97502-097502.